公开(公告)号：US20180149962A1

公开(公告)日：2018-05-31

申请号：US15580331

申请日：2016-06-08

Applicant: HOYA CORPORATION

Inventor： Takumi KOBAYASHI ,  Kazuhiro HAMAMOTO ,  Tatsuo ASAKAWA ,  Tsutomu SHOKI

IPC: G03F1/40 ,  G03F1/24 ,  G03F1/54

CPC classification number: G03F1/40 ,  G03F1/24 ,  G03F1/54

Abstract: A substrate with an electrically conductive film for fabricating a reflective mask is obtained that is capable of preventing positional shift of the reflective mask during pattern transfer. Provided is a substrate with an electrically conductive film used in lithography, the substrate with an electrically conductive film having an electrically conductive film formed on one of the main surfaces of a mask blank substrate, and a coefficient of static friction of the surface of the electrically conductive film is not less than 0.25.

公开(公告)号：US20160282711A1

公开(公告)日：2016-09-29

申请号：US15179030

申请日：2016-06-10

Applicant: HOYA CORPORATION

Inventor： Kazuhiro HAMAMOTO ,  Tatsuo ASAKAWA ,  Osamu MARUYAMA ,  Tsutomu SHOKI

IPC: G03F1/24

CPC classification number: G03F1/24 ,  G03F1/48

Abstract: This invention provides a reflective mask blank capable of preventing peeling-off of a multilayer reflective film due to cleaning or the like in a mask manufacturing process or during mask use. The reflective mask blank includes a multilayer reflective film, a protective film, an absorber film, and a resist film formed in this order on a substrate. Assuming that a distance from the center of the substrate to an outer peripheral end of the multilayer reflective film is L(ML), that a distance from the center of the substrate to an outer peripheral end of the protective film is L(Cap), that a distance from the center of the substrate to an outer peripheral end of the absorber film is L(Abs), and that a distance from the center of the substrate to an outer peripheral end of the resist film is L(Res), L(Abs)>L(Res)>L(Cap)≧L(ML) and the outer peripheral end of the resist film is located inward of an outer peripheral end of the substrate.

公开(公告)号：US20160238925A1

公开(公告)日：2016-08-18

申请号：US14787532

申请日：2014-08-29

Applicant: HOYA CORPORATION

Inventor： Kazuhiro HAMAMOTO ,  Tatsuo ASAKAWA ,  Tsutomu SHOKI

IPC: G03F1/24 ,  G03F7/20

CPC classification number: G03F1/24 ,  G03F1/84 ,  G03F7/2004

Abstract: A reflective mask blank capable of facilitating the discovery of contaminants, scratches and other critical defects by inhibiting the detection of pseudo defects attributable to surface roughness of a substrate or film in a defect inspection using a highly sensitive defect inspection apparatus. The reflective mask blank has a mask blank multilayer film comprising a multilayer reflective film, obtained by alternately laminating a high refractive index layer and a low refractive index layer, and an absorber film on a main surface of a mask blank substrate, wherein, in the relationship between bearing area (%) and bearing depth (nm) as measured with an atomic force microscope for a 1 μm×1 μm region of the surface of the reflective mask blank on which the mask blank multilayer film is formed, the surface of the reflective mask blank satisfies the relationship of (BA70−BA30)/(BD70−BD30)≧60(%/nm) and maximum height (Rmax)≦4.5 nm.

Abstract translation: 一种能够通过使用高度敏感的缺陷检查装置在缺陷检查中抑制由于基材或膜的表面粗糙度引起的伪缺陷的检测来促进污染物，划痕和其它临界缺陷的发现的反射掩模板。 反射掩模板具有掩模坯料多层膜，其包括通过交替层叠高折射率层和低折射率层而获得的多层反射膜，以及在掩模坯料基板的主表面上的吸收膜，其中， 对于其上形成掩模坯料多层膜的反射掩模板的表面的1μm×1μm区域，用原子力显微镜测量的承载面积（％）和承载深度（nm）之间的关系， 反射掩模坯料满足（BA70-BA30）/（BD70-BD30）≥60（％/ nm）和最大高度（Rmax）≤4.5nm的关系。

公开(公告)号：US20160161837A1

公开(公告)日：2016-06-09

申请号：US14787497

申请日：2014-08-29

Applicant: HOYA CORPORATION

Inventor： Kazuhiro HAMAMOTO ,  Tatsuo ASAKAWA ,  Tsutomu SHOKI

IPC: G03F1/24 ,  G03F7/20

CPC classification number: G03F1/24 ,  G03F7/2004

Abstract: Provided is a reflective mask blank capable of facilitating the discovery of contaminants, scratches and other critical defects by inhibiting the detection of pseudo defects attributable to surface roughness of a substrate or film in a defect inspection using a highly sensitive defect inspection apparatus. The reflective mask blank has a mask blank multilayer film comprising a multilayer reflective film, obtained by alternately laminating a high refractive index layer and a low refractive index layer, and an absorber film on a main surface of a mask blank substrate, wherein the root mean square roughness (Rms), obtained by measuring a 3 μm×3 μm region on the surface of the reflective mask blank on which the mask blank multilayer film is formed with an atomic force microscope, is not more than 0.5 nm and the power spectrum density at a spatial frequency of 1 μm−1 to 10 μm−1 is not more than 50 nm4.

Abstract translation: 本发明提供一种能够通过使用高灵敏度的缺陷检查装置在缺陷检查中抑制由于基板或膜的表面粗糙度引起的伪缺陷的检测而有助于发现污染物，划痕和其它关键缺陷的反射掩模板。 反射掩模板具有掩模坯料多层膜，其包括通过交替层叠高折射率层和低折射率层而获得的多层反射膜，以及在掩模坯料基板的主表面上的吸收膜，其中根平均 通过用原子力显微镜测量其上形成掩模坯料多层膜的反射掩模坯料的表面上的3μm×3μm区域获得的平方粗糙度（Rms）不大于0.5nm，功率谱密度 在1μm〜10μm的空间频率处不大于50nm。

公开(公告)号：US20170263444A1

公开(公告)日：2017-09-14

申请号：US15508544

申请日：2015-09-14

Applicant: HOYA CORPORATION

Inventor： Tsutomu SHOKI ,  Tatsuo ASAKAWA ,  Hirofumi KOZAKAI

IPC: H01L21/027 ,  C23C14/46 ,  C23C14/58 ,  C23C14/00 ,  C23C14/35 ,  G03F1/76 ,  C23C14/34 ,  G03F1/24 ,  G03F1/54 ,  G03F1/48 ,  G03F1/80 ,  G03F7/20 ,  C23C14/18 ,  C23C14/06

CPC classification number: H01L21/0274 ,  C23C14/18 ,  C23C14/185 ,  C23C14/34 ,  C23C14/46 ,  C23C14/5806 ,  G03F1/24 ,  G03F1/48 ,  G03F1/54 ,  G03F1/76 ,  G03F1/80 ,  G03F1/86 ,  G03F7/2002

Abstract: The present invention aims to provide a reflective mask blank and a reflective mask which have a highly smooth multilayer reflective film as well as a low number of defects, and methods of manufacturing the same, and aims to prevent charge-up during a mask defect inspection using electron beams.The present invention provides a reflective mask blank for EUV lithography in which a conductive underlying film, a multilayer reflective film that reflects exposure light, and an absorber film that absorbs exposure light are layered on a substrate, wherein the conductive underlying film is a single-layer film made of a tantalum-based material or a ruthenium-based material with a film thickness of greater than or equal to 1 nm and less than or equal to 10 nm that is formed adjacent to the multilayer reflective film, or the conductive underlying film is a multilayer film including a layer of a tantalum-based material with a film thickness of greater than or equal to 1 nm and less than or equal to 10 nm that is formed adjacent to the multilayer reflective film and a layer of a conductive material that is formed between the layer of the tantalum-based material and the substrate. The present invention also provides a reflective mask manufactured using the reflective mask blank. Furthermore, a semiconductor device is manufactured using the reflective mask.

公开(公告)号：US20150301441A1

公开(公告)日：2015-10-22

申请号：US14418629

申请日：2013-07-27

Applicant: HOYA CORPORATION

Inventor： Kazuhiro HAMAMOTO ,  Tatsuo ASAKAWA ,  Osamu MARUYAMA ,  Tsutomu SHOKI

IPC: G03F1/24

CPC classification number: G03F1/24 ,  G03F1/48

Abstract: This invention provides a reflective mask blank capable of preventing peeling-off of a multilayer reflective film due to cleaning or the like in a mask manufacturing process or during mask use. The reflective mask blank includes a multilayer reflective film, a protective film, an absorber film, and a resist film formed in this order on a substrate. Assuming that a distance from the center of the substrate to an outer peripheral end of the multilayer reflective film is L(ML), that a distance from the center of the substrate to an outer peripheral end of the protective film is L(Cap), that a distance from the center of the substrate to an outer peripheral end of the absorber film is L(Abs), and that a distance from the center of the substrate to an outer peripheral end of the resist film is L(Res), L(Abs)>L(Res)>L(Cap)≧L(ML) and the outer peripheral end of the resist film is located inward of an outer peripheral end of the substrate.

Abstract translation: 本发明提供了一种能够防止在掩模制造工艺中或在掩模使用期间由于清洁等而剥离多层反射膜的反射掩模板。 反射掩模坯料包括在基板上依次形成的多层反射膜，保护膜，吸收膜和抗蚀剂膜。 假设从基板的中心到多层反射膜的外周端的距离为L（ML），则从基板的中心到保护膜的外周端的距离为L（Cap）， 从基板的中心到吸收膜的外周端的距离为L（Abs），并且从基板的中心到抗蚀剂膜的外周端的距离为L（Res），L （Ab）> L（Res）> L（Cap）≥L（ML），并且抗蚀剂膜的外周端位于衬底的外周端的内侧。