公开(公告)号：US20210255536A1

公开(公告)日：2021-08-19

申请号：US17227655

申请日：2021-04-12

Applicant: HOYA CORPORATION

Inventor： Yohei IKEBE ,  Tsutomu SHOKI ,  Takahiro ONOUE ,  Hirofumi KOZAKAI

IPC: G03F1/24 ,  G03F1/26

Abstract: Provided are a reflective mask blank, having a phase shift film having little dependence of phase difference and reflectance on film thickness, and a reflective mask. The reflective mask blank is characterized in that the phase shift film is composed of a material comprised of an alloy having two or more types of metal so that reflectance of the surface of the phase shift film is more than 3% to not more than 20% and so as to have a phase difference of 170 degrees to 190 degrees, and when a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k>α*n+β is defined as Group A and a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k

公开(公告)号：US20210208498A1

公开(公告)日：2021-07-08

申请号：US17056713

申请日：2019-05-24

Applicant: HOYA CORPORATION

Inventor： Yohei IKEBE ,  Tsutomu SHOKI

IPC: G03F1/32

Abstract: Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask, and also possible to form a fine and highly accurate phase-shift pattern. A reflective mask blank having, in the following order on a substrate, a multilayer reflective film and a phase-shift film that shifts the phase of EUV light, said reflective mask blank characterized in that the phase-shift film has a thin film comprising a metal-containing material that contains: ruthenium (Ru); and at least one element from among chromium (Cr), nickel (Ni), (Co), aluminum (Al), silicon (Si), titanium (Ti), vanadium (V), germanium (Ge), niobium (Nb), molybdenum (Mo), tin (Sn), tellurium (Te), hafnium (Hf), tungsten (W), and rhenium (Re).

公开(公告)号：US20200310239A1

公开(公告)日：2020-10-01

申请号：US16754306

申请日：2018-10-16

Applicant: HOYA CORPORATION

Inventor： Kazuhiro HAMAMOTO ,  Tsutomu SHOKI ,  Yohei IKEBE

IPC: G03F1/24 ,  G03F1/42 ,  G03F1/60 ,  G03F1/54 ,  G03F1/84 ,  H01L21/027

Abstract: A substrate with a multilayer reflective film, a reflective mask blank, a reflective mask and a method of manufacturing a semiconductor device can prevent contamination of the surface of the multilayer reflective film even in the case of having formed reference marks on the multilayer reflective film. A substrate with a multilayer reflective film contains a substrate, a multilayer reflective film that reflects EUV light formed on the substrate, and a protective film formed on the multilayer reflective film. Reference marks are formed to a concave shape on the surface of the protective film. A surface layer of the reference marks contains an element that is the same as at least one of the elements contained in the protective film. A shrink region, where at least a portion of the plurality of films contained in the multilayer reflective film are shrunk, is formed at the bottom of the reference marks.

公开(公告)号：US20180149962A1

公开(公告)日：2018-05-31

申请号：US15580331

申请日：2016-06-08

Applicant: HOYA CORPORATION

Inventor： Takumi KOBAYASHI ,  Kazuhiro HAMAMOTO ,  Tatsuo ASAKAWA ,  Tsutomu SHOKI

IPC: G03F1/40 ,  G03F1/24 ,  G03F1/54

CPC classification number: G03F1/40 ,  G03F1/24 ,  G03F1/54

Abstract: A substrate with an electrically conductive film for fabricating a reflective mask is obtained that is capable of preventing positional shift of the reflective mask during pattern transfer. Provided is a substrate with an electrically conductive film used in lithography, the substrate with an electrically conductive film having an electrically conductive film formed on one of the main surfaces of a mask blank substrate, and a coefficient of static friction of the surface of the electrically conductive film is not less than 0.25.

公开(公告)号：US20170010527A1

公开(公告)日：2017-01-12

申请号：US15275719

申请日：2016-09-26

Applicant: HOYA CORPORATION

Inventor： Toshihiko ORIHARA ,  Kazuhiro HAMAMOTO ,  Hirofumi KOZAKAI ,  Youichi USUI ,  Tsutomu SHOKI ,  Junichi HORIKAWA

IPC: G03F1/48 ,  H01L21/308 ,  G03F7/20 ,  G03F1/22 ,  G03F7/16

CPC classification number: G03F1/48 ,  B82Y10/00 ,  B82Y40/00 ,  C03C3/06 ,  C03C17/3435 ,  C03C17/3626 ,  C03C17/3636 ,  C03C17/3639 ,  C03C17/3649 ,  C03C17/3665 ,  C03C23/0075 ,  C03C2201/42 ,  C03C2218/33 ,  G02B5/08 ,  G02B5/0816 ,  G02B5/0891 ,  G03F1/22 ,  G03F7/16 ,  G03F7/2002 ,  G03F7/2004 ,  G03F7/70733 ,  H01L21/3081 ,  H01L21/3085

Abstract: Disclosed is a mask blank substrate for use in lithography, wherein the main surface on which the transfer pattern of the substrate is formed has a root mean square roughness (Rms) of not more than 0.15 nm obtained by measuring an area of 1 μm×1 μm with an atomic force microscope, and has a power spectrum density of not more than 10 nm4 at a spatial frequency of not less than 1 μm−1.

Abstract translation: 公开了一种用于光刻的掩模空白基板，其中形成基板的转印图案的主表面具有通过测量1μm×1的面积获得的不大于0.15nm的均方根粗糙度（Rms） 具有原子力显微镜，并且在不小于1μm-1的空间频率下具有不大于10nm 4的功率谱密度。

公开(公告)号：US20240036457A1

公开(公告)日：2024-02-01

申请号：US18483453

申请日：2023-10-09

Applicant: HOYA CORPORATION

Inventor： Yohei IKEBE ,  Tsutomu SHOKI

IPC: G03F1/32 ,  G03F1/24

CPC classification number: G03F1/32 ,  G03F1/24 ,  G03F7/2004

Abstract: Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask, and also possible to form a fine and highly accurate phase-shift pattern. A reflective mask blank having, in the following order on a substrate, a multilayer reflective film and a phase-shift film that shifts the phase of EUV light, said reflective mask blank characterized in that the phase-shift film has a thin film comprising a metal-containing material that contains: ruthenium (Ru); and at least one element from among chromium (Cr), nickel (Ni), (Co), aluminum (Al), silicon (Si), titanium (Ti), vanadium (V), germanium (Ge), niobium (Nb), molybdenum (Mo), tin (Sn), tellurium (Te), hafnium (Hf), tungsten (W), and rhenium (Re).

公开(公告)号：US20210223681A1

公开(公告)日：2021-07-22

申请号：US17056676

申请日：2019-05-24

Applicant: HOYA CORPORATION

Inventor： Yohei IKEBE ,  Tsutomu SHOKI

IPC: G03F1/26 ,  G03F1/24

Abstract: Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask, and also possible to form a fine and highly accurate phase-shift pattern. A reflective mask blank having, in the following order on a substrate, a multilayer reflective film and a phase-shift film that shifts the phase of EUV light, said reflective mask blank characterized in that: the phase-shift film has a first layer and a second layer; the first layer comprises a material that contains at least one element from among tantalum (Ta) and chromium (Cr); and the second layer comprises a metal-containing material that contains ruthenium (Ru) and at least one element from among chromium (Cr), nickel (Ni), cobalt (Co), vanadium (V), niobium (Nb), molybdenum (Mo), tungsten (W), and rhenium (Re).

公开(公告)号：US20210103209A1

公开(公告)日：2021-04-08

申请号：US16955734

申请日：2018-12-21

Applicant: HOYA CORPORATION

Inventor： Masanori NAKAGAWA ,  Tsutomu SHOKI

IPC: G03F1/24 ,  G03F1/58 ,  H01L21/033

Abstract: A substrate with a conductive film for manufacturing a reflective mask which has a rear-surface conductive film with high mechanical strength and is capable of correcting positional deviation of the reflective mask from the rear surface side by a laser beam or the like. A substrate with a conductive film has a conductive film formed on one surface of a main surface of a mask blank substrate used for lithography, wherein the conductive film includes a transparent conductive layer provided on a substrate side and an upper layer provided on the transparent conductive layer, the conductive film has a transmittance of 10% or more for light of wavelength 532 nm, the upper layer is made of a material including tantalum (Ta) and boron (B), and the upper layer has a film thickness of 0.5 nm or more and less than 10 nm.

公开(公告)号：US20200249558A1

公开(公告)日：2020-08-06

申请号：US16756727

申请日：2018-10-16

Applicant: HOYA CORPORATION

Inventor： Kazuhiro HAMAMOTO ,  Tsutomu SHOKI

IPC: G03F1/24 ,  G03F1/86 ,  G03F1/58 ,  G03F1/42 ,  G03F1/80 ,  G03F1/60 ,  G03F1/74 ,  G03F7/20 ,  H01L21/027 ,  H01L21/033

Abstract: A substrate with a multilayer reflective film, a reflective mask blank, a reflective mask and a method of manufacturing a semiconductor device that can prevent contamination of the surface of the multilayer reflective film even in the case of having formed reference marks on the multilayer reflective film. A substrate with a multilayer reflective film contains a substrate and a multilayer reflective film that reflects EUV light formed on the substrate. Reference marks are formed to a concave shape on the surface of the substrate with the multilayer reflective film. The reference marks have grooves or protrusions roughly in the center. The shape of the grooves or protrusions when viewed from overhead is similar or roughly similar to the shape of the reference marks.

公开(公告)号：US20190384158A1

公开(公告)日：2019-12-19

申请号：US16490018

申请日：2018-02-20

Applicant: HOYA CORPORATION

Inventor： Yohei IKEBE ,  Tsutomu SHOKI ,  Takahiro ONOUE ,  Hirofumi KOZAKAI

IPC: G03F1/24 ,  G03F1/26 ,  C23C14/14

Abstract: Provided are a reflective mask blank, having a phase shift film having little dependence of phase difference and reflectance on film thickness, and a reflective mask. The reflective mask blank is characterized in that the phase shift film is composed of a material comprised of an alloy having two or more types of metal so that reflectance of the surface of the phase shift film is more than 3% to not more than 20% and so as to have a phase difference of 170 degrees to 190 degrees, and when a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k>α*n+β is defined as Group A and a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k