Invention Application
- Patent Title: Externally-Strain-Engineered Semiconductor Photonic and Electronic Devices and Assemblies and Methods of Making Same
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Application No.: US15562462Application Date: 2016-04-08
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Publication No.: US20180090911A1Publication Date: 2018-03-29
- Inventor: Jae-Hyun Ryou , Shahab Shervin , Seung Hwan Kim
- Applicant: University of Houston System
- Applicant Address: US TX Houston
- Assignee: University of Houston System
- Current Assignee: University of Houston System
- Current Assignee Address: US TX Houston
- International Application: PCT/US16/26707 WO 20160408
- Main IPC: H01S5/32
- IPC: H01S5/32 ; H01S5/323 ; H01S5/34 ; H01L21/8238 ; H01L29/49 ; H01L29/78

Abstract:
Externally-strained devices such as LED and FET structures as discussed herein may have strain applied before or during their being coupled to a housing or packaging substrate. The packaging substrate may also be strained prior to receiving the structure. The strain on the devices enables modulation of light intensity, color, and electrical currents in some embodiments, and in alternate embodiments, enables a fixed strain to be induced and maintained in the structures.
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