Invention Application
- Patent Title: EXTREME ULTRAVIOLET MASK BLANK DEFECT REDUCTION METHODS
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Application No.: US17077170Application Date: 2020-10-22
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Publication No.: US20210124253A1Publication Date: 2021-04-29
- Inventor: Herng Yau Yoong , Wen Xiao , Vibhu Jindal , Shuwei Liu , Sanjay Bhat , Azeddine Zerrade
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Main IPC: G03F1/24
- IPC: G03F1/24 ; G03F7/16 ; G03F1/48
Abstract:
Extreme ultraviolet (EUV) mask blanks, methods for their manufacture, and production systems therefor are disclosed. A method for forming an EUV mask blank comprises placing a substrate in a multi-cathode physical vapor deposition chamber, depositing a multilayer stack, removing the substrate from the chamber and passivating the PVD chamber.
Information query
