Invention Application
- Patent Title: APPARATUS AND METHODS FOR PERFORMING AN IN-SITU ETCH OF REACTION CHAMBERS WITH FLUORINE-BASED RADICALS
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Application No.: US18973788Application Date: 2024-12-09
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Publication No.: US20250101581A1Publication Date: 2025-03-27
- Inventor: Amit Mishra , Bhushan Zope , Shankar Swaminathan , Theodorus G.M. Oosterlaken
- Applicant: ASM IP Holding B.V.
- Applicant Address: NL Almere
- Assignee: ASM IP Holding B.V.
- Current Assignee: ASM IP Holding B.V.
- Current Assignee Address: NL Almere
- Main IPC: C23C16/44
- IPC: C23C16/44 ; C23C16/06 ; C23C16/455 ; C23C16/52 ; H01J37/32
Abstract:
An apparatus and method for cleaning or etching a molybdenum film or a molybdenum nitride film from an interior of a reaction chamber in a reaction system are disclosed. A remote plasma unit is utilized to activate a halide precursor mixed with an inert gas source to form a radical gas. The radical gas reacts with the molybdenum film or the molybdenum nitride film to form a by-product that is removed from the interior of the reaction chamber by a purge gas.
Information query
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