Invention Grant
- Patent Title: Sputtering apparatus and an ion source
- Patent Title (中): 溅射装置和离子源
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Application No.: US913927Application Date: 1992-07-17
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Publication No.: US5288386APublication Date: 1994-02-22
- Inventor: Kenichi Yanagi , Mitsuo Kato , Kazuya Tsurusaki , Toshio Taguchi , Kenji Atarashiya , Tadashi Rokkaku , Ichiro Yamashita
- Applicant: Kenichi Yanagi , Mitsuo Kato , Kazuya Tsurusaki , Toshio Taguchi , Kenji Atarashiya , Tadashi Rokkaku , Ichiro Yamashita
- Applicant Address: JPX Tokyo
- Assignee: Mitsubishi Jukogyo Kabushiki Kaisha
- Current Assignee: Mitsubishi Jukogyo Kabushiki Kaisha
- Current Assignee Address: JPX Tokyo
- Priority: JPX3-178114 19910718; JPX3-178115 19910718; JPX3-178116 19910718; JPX3-205906 19910816; JPX3-205907 19910816
- Main IPC: H01J27/08
- IPC: H01J27/08 ; H01J27/18 ; H01J37/08 ; H01J37/317 ; C23C14/35
Abstract:
A sputtering apparatus including two electrodes, a sputtering target disposed on one of the electrodes, and a gas supply for supplying a discharge gas in a vacuum to produce an electric discharge between the two electrodes and whereby particles sputtered from the target due to impact thereon of ions produced by the discharge, are deposited on a substrate. The target disposed on one electrode is formed into an elongated band and the other electrode is disposed so as to enclose the target. The other electrode is also provided with a magnet for producing a magnetic field thereon, and further includes a narrow elongated slot which defines a narrow sputter particle outlet. The narrow sputter particle outlet permits a pressure to exist near the electrical discharge which is higher than the pressure near the substrate. According to a preferred embodiment, the sputtering apparatus has an ion source combined integrally therewith.
Public/Granted literature
- US5974752A System for jointing panels Public/Granted day:1999-11-02
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