Invention Grant
US07023003B2 Ion implanter and method of preventing undesirable ions from implanting a target wafer
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离子注入机和防止不需要的离子注入目标晶片的方法
- Patent Title: Ion implanter and method of preventing undesirable ions from implanting a target wafer
- Patent Title (中): 离子注入机和防止不需要的离子注入目标晶片的方法
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Application No.: US10804890Application Date: 2004-03-18
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Publication No.: US07023003B2Publication Date: 2006-04-04
- Inventor: Chen-Chung Li , Jui-Chun Weng , Chi-Chieh Wang , Tai-Kun Kao
- Applicant: Chen-Chung Li , Jui-Chun Weng , Chi-Chieh Wang , Tai-Kun Kao
- Applicant Address: TW HsinChu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW HsinChu
- Agency: Tung & Associates
- Main IPC: H01J37/00
- IPC: H01J37/00 ; H01J37/08 ; H01J37/20

Abstract:
An ion implanter is provided having an ion source; an AMU analyzing magnet having a fixed radius Ram; an ion extraction voltage source; a communication interface for monitoring implantation parameters; and an equipment server having a data log. The ion implanter further has an arithmetic processor capable of determining a real-time estimated radius Re of a circular path of ions being implanted into a target wafer. A method of using the ion implanter provide an interlock on an AMU of each of a plurality of ions being implanted into the target wafer. The method has the step of determining in real-time if an ion implanter is implanting a desired ion into a target wafer. Also, the method determines if an absolute value of an offset between the Ram and Re exceeds a predetermined radius tolerance level L and adjusts the implanter accordingly if L is exceeded.
Public/Granted literature
- US20050205808A1 ION IMPLANTER AND METHOD OF PREVENTING UNDESIRABLE IONS FROM IMPLANTING A TARGET WAFER Public/Granted day:2005-09-22
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