Invention Grant
US07023003B2 Ion implanter and method of preventing undesirable ions from implanting a target wafer 失效
离子注入机和防止不需要的离子注入目标晶片的方法

Ion implanter and method of preventing undesirable ions from implanting a target wafer
Abstract:
An ion implanter is provided having an ion source; an AMU analyzing magnet having a fixed radius Ram; an ion extraction voltage source; a communication interface for monitoring implantation parameters; and an equipment server having a data log. The ion implanter further has an arithmetic processor capable of determining a real-time estimated radius Re of a circular path of ions being implanted into a target wafer. A method of using the ion implanter provide an interlock on an AMU of each of a plurality of ions being implanted into the target wafer. The method has the step of determining in real-time if an ion implanter is implanting a desired ion into a target wafer. Also, the method determines if an absolute value of an offset between the Ram and Re exceeds a predetermined radius tolerance level L and adjusts the implanter accordingly if L is exceeded.
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