Invention Grant
- Patent Title: Methods and systems for measuring critical dimensions of fine patterns using scanning electron microscope pictures and secondary electron signal profiles
- Patent Title (中): 使用扫描电子显微镜图像和二次电子信号轮廓测量精细图案的关键尺寸的方法和系统
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Application No.: US11008477Application Date: 2004-12-09
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Publication No.: US07091485B2Publication Date: 2006-08-15
- Inventor: Min-Sub Kang , Sang-Kil Lee , Kwang-Sik Kim , Kyung-Ho Jung , Sung-Joong Kim
- Applicant: Min-Sub Kang , Sang-Kil Lee , Kwang-Sik Kim , Kyung-Ho Jung , Sung-Joong Kim
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2003-0090187 20031211
- Main IPC: H01J37/28
- IPC: H01J37/28

Abstract:
A pattern is inspected by acquiring a scanning electron microscope picture of an inspection pattern, and acquiring a scanning electron microscope secondary electron signal profile of the inspection pattern. A determination is made as to whether the inspection pattern is defective by comparing the scanning electron microscope picture of the inspection pattern to a scanning electron microscope picture of a sample pattern, and by comparing the scanning electron microscope secondary electron signal profile of the inspection pattern to a scanning electron microscope secondary electron signal profile of a sample pattern.
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