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1.发明授权Methods, systems and computer program products for measuring critical dimensions of fine patterns using scanning electron microscope pictures and secondary electron signal profiles 有权使用扫描电子显微镜图像和二次电子信号轮廓测量精细图案的关键尺寸的方法，系统和计算机程序产品公开(公告)号：US07923684B2
公开(公告)日：2011-04-12
申请号：US12274471
申请日：2008-11-20
Applicant: Min-Sub Kang , Sang-Kil Lee , Kwang-Sik Kim , Kyung-Ho Jung , Sung-Joong Kim
Inventor： Min-Sub Kang , Sang-Kil Lee , Kwang-Sik Kim , Kyung-Ho Jung , Sung-Joong Kim
IPC: H01J37/28
CPC classification number: H01J37/28 , G06K9/0014 , H01J2237/2814 , H01J2237/2817
Abstract: A pattern is inspected by acquiring a scanning electron microscope picture of an inspection pattern, and acquiring a scanning electron microscope secondary electron signal profile of the inspection pattern. A determination is made as to whether the inspection pattern is defective by comparing the scanning electron microscope picture of the inspection pattern to a scanning electron microscope picture of a sample pattern, and by comparing the scanning electron microscope secondary electron signal profile of the inspection pattern to a scanning electron microscope secondary electron signal profile of a sample pattern.
Abstract translation: 通过获取检查图案的扫描电子显微镜图像并获取检查图案的扫描电子显微镜二次电子信号轮廓来检查图案。 通过将检查图案的扫描电子显微镜照片与样品图案的扫描电子显微镜照片进行比较，并将检查图案的扫描电子显微镜二次电子信号轮廓与 样品图案的扫描电子显微镜二次电子信号轮廓。
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2.发明申请Methods, Systems and Computer Program Products for Measuring Critical Dimensions of Fine Patterns Using Scanning Electron Microscope Pictures and Secondary Electron Signal Profiles 有权使用扫描电子显微镜图像和二次电子信号轮廓测量精细图案的临界尺寸的方法，系统和计算机程序产品公开(公告)号：US20090077696A1
公开(公告)日：2009-03-19
申请号：US12274471
申请日：2008-11-20
Applicant: Min-Sub Kang , Sang-Kil Lee , Kwang-Sik Kim , Kyung-Ho Jung , Sung-Joong Kim
Inventor： Min-Sub Kang , Sang-Kil Lee , Kwang-Sik Kim , Kyung-Ho Jung , Sung-Joong Kim
CPC classification number: H01J37/28 , G06K9/0014 , H01J2237/2814 , H01J2237/2817
Abstract: A pattern is inspected by acquiring a scanning electron microscope picture of an inspection pattern, and acquiring a scanning electron microscope secondary electron signal profile of the inspection pattern. A determination is made as to whether the inspection pattern is defective by comparing the scanning electron microscope picture of the inspection pattern to a scanning electron microscope picture of a sample pattern, and by comparing the scanning electron microscope secondary electron signal profile of the inspection pattern to a scanning electron microscope secondary electron signal profile of a sample pattern.
Abstract translation: 通过获取检查图案的扫描电子显微镜图像并获取检查图案的扫描电子显微镜二次电子信号轮廓来检查图案。 通过将检查图案的扫描电子显微镜照片与样品图案的扫描电子显微镜照片进行比较，并将检查图案的扫描电子显微镜二次电子信号轮廓与 样品图案的扫描电子显微镜二次电子信号轮廓。
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Patent Agency Ranking
3.发明授权Computer program products for measuring critical dimensions of fine patterns using scanning electron microscope pictures and secondary electron signal profiles 有权使用扫描电子显微镜图像和二次电子信号轮廓测量精细图案的关键尺寸的计算机程序产品公开(公告)号：US07468512B2
公开(公告)日：2008-12-23
申请号：US11426713
申请日：2006-06-27
Applicant: Min-Sub Kang , Sang-Kil Lee , Kwang-Sik Kim , Kyung-Ho Jung , Sung-Joong Kim
Inventor： Min-Sub Kang , Sang-Kil Lee , Kwang-Sik Kim , Kyung-Ho Jung , Sung-Joong Kim
IPC: G01N23/00
CPC classification number: H01J37/28 , G06K9/0014 , H01J2237/2814 , H01J2237/2817
Abstract: A pattern is inspected by acquiring a scanning electron microscope picture of an inspection pattern, and acquiring a scanning electron microscope secondary electron signal profile of the inspection pattern. A determination is made as to whether the inspection pattern is defective by comparing the scanning electron microscope picture of the inspection pattern to a scanning electron microscope picture of a sample pattern, and by comparing the scanning electron microscope secondary electron signal profile of the inspection pattern to a scanning electron microscope secondary electron signal profile of a sample pattern.
Abstract translation: 通过获取检查图案的扫描电子显微镜图像并获取检查图案的扫描电子显微镜二次电子信号轮廓来检查图案。 通过将检查图案的扫描电子显微镜照片与样品图案的扫描电子显微镜照片进行比较，并将检查图案的扫描电子显微镜二次电子信号轮廓与 样品图案的扫描电子显微镜二次电子信号轮廓。
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4.发明申请Methods, systems and computer program products for measuring critical dimensions of fine patterns using scanning electron microscope pictures and secondary electron signal profiles 有权使用扫描电子显微镜图像和二次电子信号轮廓测量精细图案的关键尺寸的方法，系统和计算机程序产品公开(公告)号：US20050127292A1
公开(公告)日：2005-06-16
申请号：US11008477
申请日：2004-12-09
Applicant: Min-Sub Kang , Sang-Kil Lee , Kwang-Sik Kim , Kyung-Ho Jung , Sung-Joong Kim
Inventor： Min-Sub Kang , Sang-Kil Lee , Kwang-Sik Kim , Kyung-Ho Jung , Sung-Joong Kim
IPC: H01L21/66 , G01Q10/04 , H01J37/22 , H01J37/28 , H01L21/027
CPC classification number: H01J37/28 , G06K9/0014 , H01J2237/2814 , H01J2237/2817
Abstract: A pattern is inspected by acquiring a scanning electron microscope picture of an inspection pattern, and acquiring a scanning electron microscope secondary electron signal profile of the inspection pattern. A determination is made as to whether the inspection pattern is defective by comparing the scanning electron microscope picture of the inspection pattern to a scanning electron microscope picture of a sample pattern, and by comparing the scanning electron microscope secondary electron signal profile of the inspection pattern to a scanning electron microscope secondary electron signal profile of a sample pattern.
Abstract translation: 通过获取检查图案的扫描电子显微镜图像并获取检查图案的扫描电子显微镜二次电子信号轮廓来检查图案。 通过将检查图案的扫描电子显微镜照片与样品图案的扫描电子显微镜照片进行比较，并将检查图案的扫描电子显微镜二次电子信号轮廓与 样品图案的扫描电子显微镜二次电子信号轮廓。
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5.发明授权Method of measuring etched state of semiconductor wafer using optical impedence measurement 失效使用光阻抗测量法测量半导体晶片的蚀刻状态的方法公开(公告)号：US06440760B1
公开(公告)日：2002-08-27
申请号：US09663644
申请日：2000-09-18
Applicant: Hyung-suk Cho , Sang-mun Chon , Sang-bong Choi , Chung-sam Chun , Min-sub Kang
Inventor： Hyung-suk Cho , Sang-mun Chon , Sang-bong Choi , Chung-sam Chun , Min-sub Kang
IPC: G01R3126
CPC classification number: G01N21/55
Abstract: Embodiments of the present invention include methods for measuring a semiconductor wafer which has been subjected to an etching process. Light is radiated at the semiconductor wafer. Light within a selected wavelength band reflected from the semiconductor wafer is measured to provide an output value. A ratio of the output value and a reference value is determined. The reference value may be based on light within the selected wavelength band reflected from a reference surface, such as a bare silicon reference surface. It is determined that the semiconductor wafer is under-etched if the determined ratio does not meet the reference value. A normalized optical impedance or a polarization ratio may be measured based on light within a selected wave length band reflected from the semiconductor wafer to provide the output value in various embodiments of the present invention. In further aspects of the present invention, a thickness of a remaining oxide layer is determined using an under-etch recipe when it is determined that a semiconductor wafer is under-etched and a thickness of a damaged/polymer layer may be determined using an over-etch recipe when it is determined that the semiconductor wafer is over-etched.
Abstract translation: 本发明的实施例包括用于测量经过蚀刻处理的半导体晶片的方法。 光在半导体晶片上被辐射。 测量从半导体晶片反射的选定波长带内的光以提供输出值。 确定输出值和参考值的比率。 参考值可以基于从诸如裸硅参考表面的参考表面反射的所选波长带内的光。 如果确定的比率不符合参考值，则确定半导体晶片被蚀刻。 可以基于从半导体晶片反射的所选波长带内的光来测量归一化的光阻抗或偏振比，以在本发明的各种实施例中提供输出值。 在本发明的另外的方面，当确定半导体晶片被低蚀刻并且可以使用过度蚀刻确定损坏/聚合物层的厚度时，使用蚀刻下配方确定剩余氧化物层的厚度 当确定半导体晶片被过蚀刻时，读取配方。
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6.发明申请Computer Program Products for Measuring Critical Dimensions of Fine Patterns Using Scanning Electron Microscope Pictures and Secondary Electron Signal Profiles 有权计算机程序产品用于使用扫描电子显微镜图像和二次电子信号轮廓测量精细图案的临界尺寸公开(公告)号：US20060231753A1
公开(公告)日：2006-10-19
申请号：US11426713
申请日：2006-06-27
Applicant: Min-Sub Kang , Sang-Kil Lee , Kwang-Sik Kim , Kyung-Ho Jung , Sung-Joong Kim
Inventor： Min-Sub Kang , Sang-Kil Lee , Kwang-Sik Kim , Kyung-Ho Jung , Sung-Joong Kim
IPC: G01N23/00
CPC classification number: H01J37/28 , G06K9/0014 , H01J2237/2814 , H01J2237/2817
Abstract: A pattern is inspected by acquiring a scanning electron microscope picture of an inspection pattern, and acquiring a scanning electron microscope secondary electron signal profile of the inspection pattern. A determination is made as to whether the inspection pattern is defective by comparing the scanning electron microscope picture of the inspection pattern to a scanning electron microscope picture of a sample pattern, and by comparing the scanning electron microscope secondary electron signal profile of the inspection pattern to a scanning electron microscope secondary electron signal profile of a sample pattern.
Abstract translation: 通过获取检查图案的扫描电子显微镜图像并获取检查图案的扫描电子显微镜二次电子信号轮廓来检查图案。 通过将检查图案的扫描电子显微镜照片与样品图案的扫描电子显微镜照片进行比较，并将检查图案的扫描电子显微镜二次电子信号轮廓与 样品图案的扫描电子显微镜二次电子信号轮廓。
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7.发明授权Methods and systems for measuring critical dimensions of fine patterns using scanning electron microscope pictures and secondary electron signal profiles 有权使用扫描电子显微镜图像和二次电子信号轮廓测量精细图案的关键尺寸的方法和系统公开(公告)号：US07091485B2
公开(公告)日：2006-08-15
申请号：US11008477
申请日：2004-12-09
Applicant: Min-Sub Kang , Sang-Kil Lee , Kwang-Sik Kim , Kyung-Ho Jung , Sung-Joong Kim
Inventor： Min-Sub Kang , Sang-Kil Lee , Kwang-Sik Kim , Kyung-Ho Jung , Sung-Joong Kim
IPC: H01J37/28
CPC classification number: H01J37/28 , G06K9/0014 , H01J2237/2814 , H01J2237/2817
Abstract: A pattern is inspected by acquiring a scanning electron microscope picture of an inspection pattern, and acquiring a scanning electron microscope secondary electron signal profile of the inspection pattern. A determination is made as to whether the inspection pattern is defective by comparing the scanning electron microscope picture of the inspection pattern to a scanning electron microscope picture of a sample pattern, and by comparing the scanning electron microscope secondary electron signal profile of the inspection pattern to a scanning electron microscope secondary electron signal profile of a sample pattern.
Abstract translation: 通过获取检查图案的扫描电子显微镜图像并获取检查图案的扫描电子显微镜二次电子信号轮廓来检查图案。 通过将检查图案的扫描电子显微镜照片与样品图案的扫描电子显微镜照片进行比较，并将检查图案的扫描电子显微镜二次电子信号轮廓与 样品图案的扫描电子显微镜二次电子信号轮廓。
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