Invention Grant
US07235185B2 Method of protecting wafer front pattern and method of performing double-sided process
失效
保护晶片前端图案的方法和进行双面处理的方法
- Patent Title: Method of protecting wafer front pattern and method of performing double-sided process
- Patent Title (中): 保护晶片前端图案的方法和进行双面处理的方法
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Application No.: US11163989Application Date: 2005-11-07
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Publication No.: US07235185B2Publication Date: 2007-06-26
- Inventor: I-Ju Chen
- Applicant: I-Ju Chen
- Applicant Address: TW Yang-Mei, Taoyuan Hsien
- Assignee: Touch Micro-System Technology Inc.
- Current Assignee: Touch Micro-System Technology Inc.
- Current Assignee Address: TW Yang-Mei, Taoyuan Hsien
- Agent Winston Hsu
- Priority: TW94125979A 20050729
- Main IPC: B44C1/22
- IPC: B44C1/22 ; H01L21/301
Abstract:
A wafer comprising a front surface and a back surface is provided. The wafer further includes a front pattern on the front surface, the front pattern having a plurality of holes. A low-viscosity fluid is formed on the front surface and filled into the holes. Following that, a high-viscosity fluid is formed and filled into the holes by diffusion.
Public/Granted literature
- US20070026674A1 METHOD OF PROTECTING WAFER FRONT PATTERN AND METHOD OF PERFORMING DOUBLE-SIDED PROCESS Public/Granted day:2007-02-01
Information query
