Invention Grant
- Patent Title: Beam stop and beam tuning methods
- Patent Title (中): 光束停止和光束调谐方法
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Application No.: US11445722Application Date: 2006-06-02
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Publication No.: US07579604B2Publication Date: 2009-08-25
- Inventor: John W. Vanderpot , Yongzhang Huang
- Applicant: John W. Vanderpot , Yongzhang Huang
- Applicant Address: US MA Beverly
- Assignee: Axcelis Technologies Inc.
- Current Assignee: Axcelis Technologies Inc.
- Current Assignee Address: US MA Beverly
- Agency: Eschweiler & Associates, LLC
- Main IPC: G21K5/10
- IPC: G21K5/10 ; H01J37/08

Abstract:
A system, method, and apparatus for mitigating contamination associated with ion implantation are provided. An ion source, end station, and mass analyzer positioned between the ion source and the end station are provided, wherein an ion beam is formed from the ion source and selectively travels through the mass analyzer to the end station, based on a position of a beam stop assembly. The beam stop assembly selectively prevents the ion beam from entering and/or exiting the mass analyzer, therein minimizing contamination associated with an unstable ion source during transition periods such as a start-up of the ion implantation system.
Public/Granted literature
- US20060284071A1 Beam stop and beam tuning methods Public/Granted day:2006-12-21
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