公开(公告)号：US07476855B2

公开(公告)日：2009-01-13

申请号：US11523144

申请日：2006-09-19

Applicant: Yongzhang Huang

Inventor： Yongzhang Huang

IPC: H01J37/137 ,  H01J37/30 ,  H01J49/20 ,  H01J49/30 ,  H01J37/304

CPC classification number: H01J49/30 ,  H01J37/026 ,  H01J37/05 ,  H01J37/21 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/024 ,  H01J2237/055 ,  H01J2237/057 ,  H01J2237/1502 ,  H01J2237/152 ,  H01J2237/2485 ,  H01J2237/3045 ,  H01J2237/30455 ,  H01J2237/31701

Abstract: An ion implantation apparatus, system, and method for controlling an ion beam, wherein a mass analyzer generally positioned between an ion source and an end station is configured to selectively control a path of a desired ion beam. The mass analyzer comprises one or more of an entrance pole mechanism positionable proximate to an entrance of the mass analyzer and an exit pole mechanism positionable proximate to an exit of the mass analyzer, wherein the position of the entrance pole mechanism and exit pole mechanism generally determines the path and focal point of the desired ion beam. A controller is configured to selectively position one or more of the entrance pole mechanism and exit pole mechanism, therein generally controlling the path of the desired ion beam at the exit of the mass analyzer, wherein the control may be based on one or more detected characteristics of the desired ion beam.

Abstract translation: 用于控制离子束的离子注入装置，系统和方法，其中通常定位在离子源和终端站之间的质量分析器被配置为选择性地控制期望的离子束的路径。 质量分析器包括一个或多个可靠近质量分析器的入口定位的入口极机构和靠近质量分析器的出口定位的出口极机构，其中入口极机构和出口极机构的位置通常确定 所需离子束的路径和焦点。 控制器被配置为选择性地定位入口极机构和出口极机构中的一个或多个，其中通常控制质量分析器出口处的期望离子束的路径，其中控制可以基于一个或多个检测到的特性 的所需离子束。

公开(公告)号：US20080067435A1

公开(公告)日：2008-03-20

申请号：US11523144

申请日：2006-09-19

Applicant: Yongzhang Huang

Inventor： Yongzhang Huang

IPC: H01J37/317 ,  H01J49/20 ,  H01J49/30

CPC classification number: H01J49/30 ,  H01J37/026 ,  H01J37/05 ,  H01J37/21 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/024 ,  H01J2237/055 ,  H01J2237/057 ,  H01J2237/1502 ,  H01J2237/152 ,  H01J2237/2485 ,  H01J2237/3045 ,  H01J2237/30455 ,  H01J2237/31701

Abstract: An ion implantation apparatus, system, and method for controlling an ion beam, wherein a mass analyzer generally positioned between an ion source and an end station is configured to selectively control a path of a desired ion beam. The mass analyzer comprises one or more of an entrance pole mechanism positionable proximate to an entrance of the mass analyzer and an exit pole mechanism positionable proximate to an exit of the mass analyzer, wherein the position of the entrance pole mechanism and exit pole mechanism generally determines the path and focal point of the desired ion beam. A controller is configured to selectively position one or more of the entrance pole mechanism and exit pole mechanism, therein generally controlling the path of the desired ion beam at the exit of the mass analyzer, wherein the control may be based on one or more detected characteristics of the desired ion beam.

Abstract translation: 用于控制离子束的离子注入装置，系统和方法，其中通常定位在离子源和终端站之间的质量分析器被配置为选择性地控制期望的离子束的路径。 质量分析器包括一个或多个可靠近质量分析器的入口定位的入口极机构和靠近质量分析器的出口定位的出口极机构，其中入口极机构和出口极机构的位置通常确定 所需离子束的路径和焦点。 控制器被配置为选择性地定位入口极机构和出口极机构中的一个或多个，其中通常控制质量分析器出口处的期望离子束的路径，其中控制可以基于一个或多个检测到的特性 的所需离子束。

公开(公告)号：US20070278427A1

公开(公告)日：2007-12-06

申请号：US11543346

申请日：2006-10-04

Applicant: Yongzhang Huang ,  Brian S. Freer ,  John Ye ,  Christopher Godfrey ,  Michael A. Graf ,  Patrick Splinter

Inventor： Yongzhang Huang ,  Brian S. Freer ,  John Ye ,  Christopher Godfrey ,  Michael A. Graf ,  Patrick Splinter

IPC: H01J37/317

CPC classification number: H01J37/304 ,  H01J37/3171 ,  H01J2237/24507 ,  H01J2237/24535 ,  H01J2237/31703

Abstract: A method derives a terminal return current or upstream current to adjust and/or compensate for variations in beam current during ion implantation. One or more individual upstream current measurements are obtained from a region of an ion implantation system. A terminal return current, or composite upstream current, is derived from the one or more current measurements. The terminal return current is then employed to adjust scanning or dose of an ion beam in order to facilitate beam current uniformity at a target wafer.

Abstract translation: 一种方法导出终端返回电流或上游电流，以调整和/或补偿离子注入期间束电流的变化。 从离子注入系统的区域获得一个或多个单独的上游电流测量。 从一个或多个电流测量导出终端返回电流或复合上游电流。 然后使用端子返回电流来调整离子束的扫描或剂量，以便于目标晶片处的束电流均匀性。

公开(公告)号：US20060284117A1

公开(公告)日：2006-12-21

申请号：US11445677

申请日：2006-06-02

Applicant: John Vanderpot ,  Yongzhang Huang

Inventor： John Vanderpot ,  Yongzhang Huang

IPC: H01J37/08

CPC classification number: H01J37/244 ,  H01J37/045 ,  H01J37/09 ,  H01J37/302 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/026 ,  H01J2237/028 ,  H01J2237/30433 ,  H01J2237/31705

Abstract: A system, method, and apparatus for mitigating contamination during ion implantation are provided. An ion source, end station, and mass analyzer positioned between the ion source and the end station are provided, wherein an ion beam is formed from the ion source and travels through the mass analyzer to the end station. An ion beam dump assembly comprising a particle collector, particle attractor, and shield are associated with the mass analyzer, wherein an electrical potential of the particle attractor is operable to attract and constrain contamination particles within the particle collector, and wherein the shield is operable to shield the electrical potential of the particle attractor from an electrical potential of an ion beam within the mass analyzer.

公开(公告)号：US20060284071A1

公开(公告)日：2006-12-21

申请号：US11445722

申请日：2006-06-02

Applicant: John Vanderpot ,  Yongzhang Huang

Inventor： John Vanderpot ,  Yongzhang Huang

IPC: B01D59/44

CPC classification number: H01J37/244 ,  H01J37/045 ,  H01J37/09 ,  H01J37/302 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/026 ,  H01J2237/028 ,  H01J2237/30433 ,  H01J2237/31705

Abstract: A system, method, and apparatus for mitigating contamination associated with ion implantation are provided. An ion source, end station, and mass analyzer positioned between the ion source and the end station are provided, wherein an ion beam is formed from the ion source and selectively travels through the mass analyzer to the end station, based on a position of a beam stop assembly. The beam stop assembly selectively prevents the ion beam from entering and/or exiting the mass analyzer, therein minimizing contamination associated with an unstable ion source during transition periods such as a start-up of the ion implantation system.

公开(公告)号：US07915597B2

公开(公告)日：2011-03-29

申请号：US12050594

申请日：2008-03-18

Applicant: Yongzhang Huang ,  Ilya Pokidov

Inventor： Yongzhang Huang ,  Ilya Pokidov

IPC: H01J3/14

CPC classification number: H01J37/3171 ,  H01J27/024 ,  H01J37/08 ,  H01J37/09 ,  H01J37/20 ,  H01J2237/0458 ,  H01J2237/083 ,  H01J2237/20214 ,  H01J2237/24507 ,  H01J2237/24535 ,  H01J2237/30455 ,  H01J2237/30483 ,  H01J2237/31703

Abstract: A system and method extraction electrode system, comprising an extraction electrode, wherein the extraction electrode, further defines an aperture and forms a portion of the outside wall of the ion source and is configured to extract ions from the ion source, a suppression disk half assembly comprising two suppression electrode plate disk halves that form a variable suppression aperture, a ground disk half assembly comprising two ground electrode plate disk halves that form an variable ground aperture, wherein the suppression disk half assembly is configured between the extraction electrode and the ground disk half assembly, wherein the suppression aperture and the ground aperture variable in the direction perpendicular to the ion beam direction of travel, and wherein the extraction electrode system is used with a pendulum reciprocating drive apparatus.

Abstract translation: 一种系统和方法提取电极系统，包括提取电极，其中所述提取电极还限定孔并形成离子源的外壁的一部分，并且被配置为从离子源提取离子，抑制盘半组件 包括形成可变抑制孔径的两个抑制电极板半部，包括形成可变接地孔的两个接地电极板半部的接地盘半组件，其中抑制盘半组件配置在提取电极和接地盘半部之间 组件，其中所述抑制孔径和所述接地孔径在垂直于所述离子束行进方向的方向上可变，并且其中所述引出电极系统与摆锤往复驱动装置一起使用。

公开(公告)号：US20090267001A1

公开(公告)日：2009-10-29

申请号：US12108890

申请日：2008-04-24

Applicant: Yongzhang Huang

Inventor： Yongzhang Huang

IPC: G21K5/10

CPC classification number: H01J37/3171 ,  H01J37/20 ,  H01J37/3007 ,  H01J2237/022 ,  H01J2237/05 ,  H01J2237/202 ,  H01J2237/24528

Abstract: An ion implantation system comprising an ion source that generates an ion beam along a beam path, a mass analyzer component downstream of the ion source that performs mass analysis and angle correction on the ion beam, a resolving aperture electrode comprising at least one electrode downstream of the mass analyzer component and along the beam path having a size and shape according to a selected mass resolution and a beam envelope, a deflection element downstream of the resolving aperture electrode that changes the path of the ion beam exiting the deflection element, a deceleration electrode downstream of the deflection element that decelerates the ion beam, a support platform within an end station for retaining and positioning a workpiece which is implanted with charged ions, and wherein the end station is mounted approximately eight degrees counterclockwise so that the deflected ion beam is perpendicular to the workpiece.

Abstract translation: 一种离子注入系统，包括沿光束路径产生离子束的离子源，离子源下游的质量分析器组件，其对离子束执行质量分析和角度校正;分辨孔径电极，包括至少一个电极 所述质量分析器部件并且沿着所述光束路径具有根据所选择的质量分辨率和光束包络的尺寸和形状;在所述分辨孔径电极下游的偏转元件改变离开偏转元件的离子束的路径;减速电极 在偏转元件的下游，使离子束减速，在终端站内的支撑平台，用于保持和定位植入有带电离子的工件，并且其中终端站逆时针安装大约八度，使得偏转的离子束垂直 到工件。

公开(公告)号：US20090236547A1

公开(公告)日：2009-09-24

申请号：US12050594

申请日：2008-03-18

Applicant: Yongzhang Huang ,  Ilya Pokidov

Inventor： Yongzhang Huang ,  Ilya Pokidov

IPC: H01J37/08

CPC classification number: H01J37/3171 ,  H01J27/024 ,  H01J37/08 ,  H01J37/09 ,  H01J37/20 ,  H01J2237/0458 ,  H01J2237/083 ,  H01J2237/20214 ,  H01J2237/24507 ,  H01J2237/24535 ,  H01J2237/30455 ,  H01J2237/30483 ,  H01J2237/31703

Abstract: A system and method extraction electrode system, comprising an extraction electrode, wherein the extraction electrode, further defines an aperture and forms a portion of the outside wall of the ion source and is configured to extract ions from the ion source, a suppression disk half assembly comprising two suppression electrode plate disk halves that form a variable suppression aperture, a ground disk half assembly comprising two ground electrode plate disk halves that form an variable ground aperture, wherein the suppression disk half assembly is configured between the extraction electrode and the ground disk half assembly, wherein the suppression aperture and the ground aperture variable in the direction perpendicular to the ion beam direction of travel, and wherein the extraction electrode system is used with a pendulum reciprocating drive apparatus.

Abstract translation: 一种系统和方法提取电极系统，包括提取电极，其中所述提取电极还限定孔并形成离子源的外壁的一部分，并且被配置为从离子源提取离子，抑制盘半组件 包括形成可变抑制孔径的两个抑制电极板半部，包括形成可变接地孔的两个接地电极板半部的接地盘半组件，其中抑制盘半组件配置在提取电极和接地盘半部之间 组件，其中所述抑制孔径和所述接地孔径在垂直于所述离子束行进方向的方向上可变，并且其中所述引出电极系统与摆锤往复驱动装置一起使用。

公开(公告)号：US06835930B2

公开(公告)日：2004-12-28

申请号：US10753731

申请日：2004-01-08

Applicant: Victor M. Benveniste ,  Yongzhang Huang

Inventor： Victor M. Benveniste ,  Yongzhang Huang

IPC: H01J4930

CPC classification number: H01J37/32082 ,  H01J37/05 ,  H01J37/3171 ,  H01J37/3266 ,  H01J2237/0041

Abstract: A mass analyzer for a ribbon shaped ion beam is disclosed. The mass analyzer comprises a pair of coils that define an entrance end and an exit end of the analyzer. Field clamps are employed at or proximate to one or more of the entrance and exit ends of the mass analyzer. The field clamps operate to terminate fringing fields close to the entrance and exit ends of the mass analyzer, thereby reducing the impact of such fringing fields on the ribbon beam and improving beam uniformity.

公开(公告)号：US06777696B1

公开(公告)日：2004-08-17

申请号：US10370952

申请日：2003-02-21

Applicant: Robert D. Rathmell ,  Bo H. Vanderberg ,  Yongzhang Huang

Inventor： Robert D. Rathmell ,  Bo H. Vanderberg ,  Yongzhang Huang

IPC: H01J37317

CPC classification number: H01J37/3171 ,  H01J37/1472

Abstract: An accelerating structure and related method for accelerating/decelerating ions of an ion beam are disclosed. The structure and related method are suitable for use in selectively implanting ions into a workpiece or wafer during semiconductor fabrication to selectively dope areas of the wafer. In addition to accelerating and/or decelerating ions, aspects of the present invention serve to focus as well as to deflect ions of an ion beam. This is accomplished by routing the ion beam through electrodes having potentials developed thereacross. The ion beam is also decontaminated as electrically neutral contaminants within the beam are not affected by the potentials and continue on generally traveling along an original path of the ion beam. The electrodes are also arranged in such a fashion so as to minimize the distance the beam has to travel, thereby mitigating the opportunity for beam blow up.

Abstract translation: 公开了一种用于离子束离子加速/减速的加速结构和相关方法。 该结构和相关方法适用于在半导体制造期间选择性地将离子注入到工件或晶片中以选择性地掺杂晶片的区域。 除了加速和/或减速离子之外，本发明的方面还用于聚焦以及偏转离子束的离子。 这是通过将离子束穿过具有在其上形成的电位的电极来实现的。 离子束也被净化，因为光束内的电中性污染物不受电位的影响，并且通常沿着离子束的原始路径继续行进。 电极也以这样的方式布置，以便使束必须行进的距离最小化，从而减轻了射束的机会。