Invention Grant
- Patent Title: Ion source
- Patent Title (中): 离子源
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Application No.: US12076979Application Date: 2008-03-26
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Publication No.: US07750313B2Publication Date: 2010-07-06
- Inventor: Hideki Fujita , Sei Umisedo , Nariaki Hamamoto
- Applicant: Hideki Fujita , Sei Umisedo , Nariaki Hamamoto
- Applicant Address: JP Kyoto
- Assignee: Nissin Ion Equipment Co., Ltd.
- Current Assignee: Nissin Ion Equipment Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2005-144376 20050517
- Main IPC: H01J49/10
- IPC: H01J49/10 ; H01J49/16 ; H01J37/08 ; H01J27/02

Abstract:
A cathode holder of a tubular shape is inserted into an opening for a cathode of a plasma generating chamber, the cathode holder positioned such that a surface thereof opposes or surrounds a side surface of a cathode. The cathode is held in the cathode holder so that a front surface of the cathode will be positioned on the same plane as, outward from, or inward from the inner wall surface. In the cathode holder is provided a tubular first heat shield surrounding the cathode with a space provided between the first heat shield and the cathode, a surface of the first heat shield positioned to oppose or surround the side surface of the cathode. At a rear end of the cathode is provided a filament. The gap between the cathode holder and the plasma generating chamber is filled with an electrical insulating material.
Public/Granted literature
- US20080277593A1 Ion source Public/Granted day:2008-11-13
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