Invention Grant
- Patent Title: Method for manufacturing field emission cathode
- Patent Title (中): 场致发射阴极的制造方法
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Application No.: US11309601Application Date: 2006-08-29
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Publication No.: US07799374B2Publication Date: 2010-09-21
- Inventor: Tsai-Shih Tung
- Applicant: Tsai-Shih Tung
- Applicant Address: TW Tu-Cheng, Taipei Hsien
- Assignee: Hon Hai Precision Industry Co., Ltd.
- Current Assignee: Hon Hai Precision Industry Co., Ltd.
- Current Assignee Address: TW Tu-Cheng, Taipei Hsien
- Agent Jeffrey T. Knapp
- Priority: CN200510121025 20051220
- Main IPC: C23C16/00
- IPC: C23C16/00 ; H05H1/24 ; B05D5/12 ; B05D1/36 ; B05D7/00

Abstract:
A method for manufacturing a carbon nanotube field emission cathode includes the steps of: providing a substrate (110) with a metallic layer (130) thereon; defining holes (131) in the metallic layer; oxidizing the metallic layer to form a metallic oxide layer (132) thereon; removing portions of the metallic oxide layer in the holes so as to expose corresponding portions of the metallic layer; forming a metal-salt catalyst layer (580) on the exposed portions of the metallic layer in the holes; and growing carbon nanotubes (690) on the substrate in the holes.
Public/Granted literature
- US20070138129A1 METHOD FOR MANUFACTURING FIELD EMISSION CATHODE Public/Granted day:2007-06-21
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