Invention Grant
US07829150B2 Growth of inorganic thin films using self-assembled monolayers as nucleation sites
有权
使用自组装单层作为成核位点的无机薄膜的生长
- Patent Title: Growth of inorganic thin films using self-assembled monolayers as nucleation sites
- Patent Title (中): 使用自组装单层作为成核位点的无机薄膜的生长
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Application No.: US11155453Application Date: 2005-06-17
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Publication No.: US07829150B2Publication Date: 2010-11-09
- Inventor: James R. Engstrom , Aravind S. Killampalli , Paul F. Ma
- Applicant: James R. Engstrom , Aravind S. Killampalli , Paul F. Ma
- Applicant Address: US NY Ithaca
- Assignee: Cornell Research Foundation, Inc.
- Current Assignee: Cornell Research Foundation, Inc.
- Current Assignee Address: US NY Ithaca
- Agency: Marjama Muldoon Blasiak & Sullivan LLP
- Main IPC: B05D1/36
- IPC: B05D1/36 ; B05D7/00 ; C23C16/00

Abstract:
Systems and methods for preparing inorganic-organic interfaces using organo-transition metal complexes and self-assembled monolayers as organic surfaces. In one embodiment, a silicon wafer is cleaned and reacted with stabilized pirhana etch to provide an oxide surface. The surface is reacted with the trichlorosilyl end of alkyltrichlorosilanes to prepare self assembling monomers (SAMs). The alkyltrichlorosilanes have the general formula R1-R—SiCl3, where R1 is —OH, —NH2, —COOH, —SH, COOCH3, —CN, and R is a conjugated hydrocarbon, such as (CH2)n where n is in the range of 3 to 18. The functionalized end of the SAM can optionally modified chemically as appropriate, and is then reacted with metal-bearing species such as tetrakis(dimethylamido)titanium, Ti[N(CH3)2]4, (TDMAT) to provide a titanium nitride layer.
Public/Granted literature
- US20060003438A1 Growth of inorganic thin films using self-assembled monolayers as nucleation sites Public/Granted day:2006-01-05
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