Invention Grant
- Patent Title: Optoelectronic semiconductor chip and method for forming a contact structure for making electrical contact with an optoelectronic semiconductor chip
- Patent Title (中): 光电子半导体芯片及形成与光电半导体芯片进行电接触的接触结构的方法
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Application No.: US11118149Application Date: 2005-04-29
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Publication No.: US07838892B2Publication Date: 2010-11-23
- Inventor: Ralph Wirth
- Applicant: Ralph Wirth
- Applicant Address: DE Regensburg
- Assignee: Osram Opto Semiconductors GmbH
- Current Assignee: Osram Opto Semiconductors GmbH
- Current Assignee Address: DE Regensburg
- Agency: Cohen Pontani Lieberman & Pavane LLP
- Priority: DE102004021150 20040429; DE102004025684 20040526
- Main IPC: H01L29/207
- IPC: H01L29/207

Abstract:
An optoelectronic semiconductor chip, comprising a plurality of semiconductor function regions (10) arranged on a common carrier layer (1, 7), at least one of the semiconductor function regions being a defect region (12), and a contact structure (18) for making electrical contact with the optoelectronic semiconductor chip. The contact structure is electrically conductively connected to at least one of the semiconductor function regions, and the contact structure is adapted to be electrically separated, or it is electrically separated, from the defect region.
Public/Granted literature
Information query
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