Invention Grant
- Patent Title: Radiation emitting semiconductor chip
- Patent Title (中): 辐射发射半导体芯片
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Application No.: US11528071Application Date: 2006-09-26
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Publication No.: US07884383B2Publication Date: 2011-02-08
- Inventor: Ralph Wirth
- Applicant: Ralph Wirth
- Applicant Address: DE Regensburg
- Assignee: Osram Opto Semiconductors GmbH
- Current Assignee: Osram Opto Semiconductors GmbH
- Current Assignee Address: DE Regensburg
- Agency: Cohen Pontani Lieberman & Pavane LLP
- Priority: DE102005046698 20050929; DE102006004591 20060201
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
A radiation-emitting semiconductor chip (1) comprising a thin-film semiconductor body (2) which has a semiconductor layer sequence with an active region (4) suitable for generating radiation, and a reflector layer (5) arranged on the thin-film semiconductor body. The semiconductor chip has a Bragg reflector in addition to the reflector layer, and the Bragg reflector (6) and the reflector layer are arranged on the same side of the active region.
Public/Granted literature
- US20070081571A1 Radiation emitting semiconductor chip Public/Granted day:2007-04-12
Information query
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