Invention Grant
- Patent Title: Trench-type semiconductor device structure
- Patent Title (中): 沟槽型半导体器件结构
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Application No.: US12177756Application Date: 2008-07-22
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Publication No.: US07985998B2Publication Date: 2011-07-26
- Inventor: Shian-Jyh Lin , Ming-Cheng Chang , Neng Tai Shih , Hung-Chang Liao
- Applicant: Shian-Jyh Lin , Ming-Cheng Chang , Neng Tai Shih , Hung-Chang Liao
- Applicant Address: TW Taoyuan
- Assignee: Nanya Technology Corp.
- Current Assignee: Nanya Technology Corp.
- Current Assignee Address: TW Taoyuan
- Agency: Ingrassia Fisher & Lorenz, P.C.
- Priority: TW97100111A 20080102
- Main IPC: H01L27/108
- IPC: H01L27/108
Abstract:
A trench-type semiconductor device structure is disclosed. The structure includes a semiconductor substrate, a gate dielectric layer and a substrate channel structure. The semiconductor substrate includes a trench having an upper portion and a lower portion. The upper portion includes a conductive layer formed therein. The lower portion includes a trench capacitor formed therein. The gate dielectric layer is located between the semiconductor substrate and the conductive layer. The substrate channel structure with openings, adjacent to the trench, is electrically connected to the semiconductor substrate via the openings.
Public/Granted literature
- US20090166702A1 TRENCH-TYPE SEMICONDUCTOR DEVICE STRUCTURE Public/Granted day:2009-07-02
Information query
IPC分类:
