Invention Grant
- Patent Title: Method for fabricating an image sensor
- Patent Title (中): 图像传感器的制造方法
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Application No.: US12128600Application Date: 2008-05-28
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Publication No.: US08137901B2Publication Date: 2012-03-20
- Inventor: Hsin-Ting Tsai , Cheng-Hung Yu
- Applicant: Hsin-Ting Tsai , Cheng-Hung Yu
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: G03F7/20
- IPC: G03F7/20

Abstract:
A method for fabricating an image sensor is disclosed. First, a semiconductor substrate is provided, in which a photosensitive region is defined on the semiconductor substrate. At least one photosensitive material is then formed on the semiconductor substrate, and a first exposure process is performed to form a tapered pattern in the photosensitive material. A second exposure process is performed to form a straight foot pattern in the photosensitive material, and a developing process is performed to remove the tapered pattern and straight foot pattern to form the photosensitive material into a plurality of photosensitive blocks. A reflow process is conducted thereafter to form the photosensitive blocks into a plurality of microlenses.
Public/Granted literature
- US20090294888A1 METHOD FOR FABRICATING AN IMAGE SENSOR Public/Granted day:2009-12-03
Information query
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