Invention Grant
US08227028B2 Method for forming amorphous silica-based coating film with low dielectric constant and thus obtained amorphous silica-based coating film
有权
用于形成具有低介电常数的无定形二氧化硅基涂膜的方法,由此获得无定形二氧化硅基涂膜
- Patent Title: Method for forming amorphous silica-based coating film with low dielectric constant and thus obtained amorphous silica-based coating film
- Patent Title (中): 用于形成具有低介电常数的无定形二氧化硅基涂膜的方法,由此获得无定形二氧化硅基涂膜
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Application No.: US12310486Application Date: 2007-07-11
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Publication No.: US08227028B2Publication Date: 2012-07-24
- Inventor: Miki Egami , Akira Nakashima , Michio Komatsu
- Applicant: Miki Egami , Akira Nakashima , Michio Komatsu
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: JGC Catalysts and Chemicals Ltd.
- Current Assignee: JGC Catalysts and Chemicals Ltd.
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: Leydig, Voit & Mayer, Ltd.
- Priority: JP2006-231202 20060828
- International Application: PCT/JP2007/063788 WO 20070711
- International Announcement: WO2008/026387 WO 20080306
- Main IPC: B05D3/02
- IPC: B05D3/02 ; B05D3/04 ; H01L29/00

Abstract:
A method of forming on a substrate an amorphous silica-based coating film having a low dielectric constant of 3.0 or below and a film strength (Young's modulus) of 3.0 GPa or more, which comprises, as a typical one, the steps of; (a) coating on the substrate a liquid composition containing hydrolysate of an organic silicon compound or compounds hydrolyzed in the presence of tetraalkylammonium hydroxide (TAAOH); (b) setting the substrate in a chamber and then drying a coating film formed on the substrate at a temperature in the range from 25 to 340° C.; (c) heating the coating film at a temperature in the range from 105 to 450° C. with introduction of a superheated steam having such a temperature into the chamber, and (d) curing the coating film at a temperature in the range from 350 to 450° C. with introduction of a nitrogen gas into the chamber.
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