Invention Grant
- Patent Title: Method of high aspect ratio plug fill
- Patent Title (中): 高比例插头填充方法
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Application No.: US12347721Application Date: 2008-12-31
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Publication No.: US08236691B2Publication Date: 2012-08-07
- Inventor: Yakov Shor , Semeon Altshuler , Maor Rotlain , Yigal Alon , Dror Horvitz
- Applicant: Yakov Shor , Semeon Altshuler , Maor Rotlain , Yigal Alon , Dror Horvitz
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: H01L21/60
- IPC: H01L21/60
Abstract:
A method of plug fill for high aspect ratio plugs wherein a nucleation layer is formed at a bottom of a via and not on the sidewalls. The plug fill is in the direction from bottom to top of the via and not inwards from the sidewalls. The resulting plug is voidless and seamless.
Public/Granted literature
- US20100167532A1 METHOD OF HIGH ASPECT RATIO PLUG FILL Public/Granted day:2010-07-01
Information query
IPC分类:
