Invention Grant
- Patent Title: Radiation source, lithographic apparatus, and device manufacturing method
- Patent Title (中): 辐射源，光刻设备和器件制造方法
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Application No.: US12712545Application Date: 2010-02-25
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Publication No.: US08368032B2Publication Date: 2013-02-05
- Inventor: Dzmitry Labetski , Erik Roelof Loopstra , Gerardus Hubertus Petrus Maria Swinkels , Tom Van Zutphen
- Applicant: Dzmitry Labetski , Erik Roelof Loopstra , Gerardus Hubertus Petrus Maria Swinkels , Tom Van Zutphen
- Applicant Address: NL Veldhoven
- Assignee: ASML Netherlands B.V.
- Current Assignee: ASML Netherlands B.V.
- Current Assignee Address: NL Veldhoven
- Agency: Pillsbury Winthrop Shaw Pittman LLP
- Main IPC: H05H1/42
- IPC: H05H1/42 ; H05H1/00 ; H01J61/28 ; H01J37/08
Abstract:
A plasma radiation source includes a vessel configured to catch a source material transmitted along a trajectory, and a decelerator configured to reduce a speed of the source material in a section of the trajectory downstream of a plasma initiation site.
Public/Granted literature
- US20100231130A1 RADIATION SOURCE, LITHOGRAPHIC APPARATUS, AND DEVICE MANUFACTURING METHOD Public/Granted day:2010-09-16
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