Invention Grant
- Patent Title: Focused ion beam apparatus
- Patent Title (中): 聚焦离子束装置
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Application No.: US12931993Application Date: 2011-02-15
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Publication No.: US08389953B2Publication Date: 2013-03-05
- Inventor: Takashi Ogawa , Kenichi Nishinaka , Yoshihiro Koyama
- Applicant: Takashi Ogawa , Kenichi Nishinaka , Yoshihiro Koyama
- Applicant Address: JP
- Assignee: SII NanoTechnology Inc.
- Current Assignee: SII NanoTechnology Inc.
- Current Assignee Address: JP
- Agency: Adams & Wilks
- Priority: JP2010-031602 20100216
- Main IPC: H01J49/10
- IPC: H01J49/10 ; H01J37/08 ; H01J27/02 ; H01J3/14

Abstract:
A focused ion beam apparatus includes an ion gun unit having an emitter tip, a gas supply unit that supplies gas to the tip, and an ion source gas supply source. An extracting electrode ionizes the gas adsorbed onto the surface of the tip and extracts ions by applying a voltage between the extracting electrode and the tip. A cathode electrode accelerates the ions toward a sample. An aperture member has an opening that passes therethrough a part of the ion beam ejected from the ion gun unit, and a lens system focuses the ion beam onto the sample.
Public/Granted literature
- US20110204252A1 Focused ion beam apparatus Public/Granted day:2011-08-25
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