Invention Grant
- Patent Title: Photoresist materials and photolithography processes
- Patent Title (中): 光刻胶材料和光刻工艺
-
Application No.: US13050305Application Date: 2011-03-17
-
Publication No.: US08507177B2Publication Date: 2013-08-13
- Inventor: Hsien-Cheng Wang , Chin-Hsiang Lin , Heng-Jen Lee , Ching-Yu Chang , Hua-Tai Lin , Burn Jeng Lin
- Applicant: Hsien-Cheng Wang , Chin-Hsiang Lin , Heng-Jen Lee , Ching-Yu Chang , Hua-Tai Lin , Burn Jeng Lin
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F7/004
- IPC: G03F7/004 ; G03F7/30 ; G03F7/039
Abstract:
A material for use in lithography processing includes a polymer that turns soluble to a base solution in response to reaction with acid and a plurality of magnetically amplified generators (MAGs) each having a magnetic element and each decomposing to form acid bonded with the magnetic element in response to radiation energy.
Public/Granted literature
- US20110165515A1 NOVEL PHOTORESIST MATERIALS AND PHOTOLITHOGRAPHY PROCESSES Public/Granted day:2011-07-07
Information query
IPC分类:
