公开(公告)号：US20080226996A1

公开(公告)日：2008-09-18

申请号：US11687497

申请日：2007-03-16

Applicant: Jhun-Hua Chen ,  Hua-Tai Lin ,  Lai Chien Wen ,  Fu-Jye Liang

Inventor： Jhun-Hua Chen ,  Hua-Tai Lin ,  Lai Chien Wen ,  Fu-Jye Liang

IPC: G03G13/04 ,  G03G15/04

CPC classification number: G03F1/36

Abstract: A photolithography system for printing a pattern of at least one contact or via on a wafer is provided. The system comprises a reticle having a layout, the layout comprises at least one polygon-shaped hole, wherein the at least one polygon-shaped hole comprises at least eight sides.

Abstract translation: 提供了一种用于在晶片上印刷至少一个接触或通孔的图案的光刻系统。 该系统包括具有布局的掩模版，布局包括至少一个多边形孔，其中至少一个多边形孔包括至少八个边。

公开(公告)号：US07399709B1

公开(公告)日：2008-07-15

申请号：US10256401

申请日：2002-09-27

Applicant: Burn-Jeng Lin ,  Hua-Tai Lin ,  Ru-Gun Liu ,  Tsai-Sheng Gau ,  Bang-Chien Ho

Inventor： Burn-Jeng Lin ,  Hua-Tai Lin ,  Ru-Gun Liu ,  Tsai-Sheng Gau ,  Bang-Chien Ho

IPC: H01L21/302

CPC classification number: H01L21/31144 ,  H01L21/0271 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/32139 ,  H01L21/76802 ,  H01L21/76808 ,  H01L2221/1026

Abstract: An image reversal method is described that removes the etch resistance requirement from a resist. A high resolution resist pattern comprised of islands, lines, or trenches is formed with a large process window by exposing through one or more masks including phase edge masks and optionally with resolution enhancement techniques. A complementary material replacement (CMR) layer comprised of an organic polymer or material such as fluorosilicate glass which has a lower etch rate than the resist is coated over the resist pattern. CMR and resist layers are etched simultaneously to provide an image reversed pattern in the CMR layer which is etch transferred into a substrate. The method avoids edge roughness like bird's beak defects in the etched pattern and is useful for applications including forming contact holes in dielectric layers, forming polysilicon gates, and forming trenches in a damascene process. It is also valuable for direct write methods where an image reversal scheme is desired.

Abstract translation: 描述了去除抗蚀剂的耐蚀刻性要求的图像反转方法。 由岛，线或沟槽组成的高分辨率抗蚀剂图案通过暴露于包括相位边缘掩模的一个或多个掩模以及可选地具有分辨率增强技术而由大的工艺窗口形成。 由有机聚合物或诸如氟硅酸盐玻璃的材料组成的互补材料置换（CMR）层被涂覆在抗蚀剂图案上。 同时蚀刻CMR和抗蚀剂层以在CMR层中提供图像反转图案，其被蚀刻转移到衬底中。 该方法避免了像蚀刻图案中的鸟喙缺陷那样的边缘粗糙度，并且可用于包括在电介质层中形成接触孔，形成多晶硅栅极以及在镶嵌工艺中形成沟槽的应用。 对于需要图像反转方案的直接写入方法也是有价值的。

公开(公告)号：US06866988B2

公开(公告)日：2005-03-15

申请号：US10264521

申请日：2002-10-05

Applicant: Shyue-Sheng Lu ,  Hong-Yuan Chu ,  Kuei-Shun Chen ,  Hua-Tai Lin

Inventor： Shyue-Sheng Lu ,  Hong-Yuan Chu ,  Kuei-Shun Chen ,  Hua-Tai Lin

IPC: G03F7/40 ,  G03C5/00

CPC classification number: G03F7/40

Abstract: A new and improved method for measuring dimensions of a photoresist pattern profile on a wafer substrate during photolithography for the fabrication of integrated circuits on the substrate. According to one embodiment, the method includes fixing the photoresist pattern profile on the substrate using a spin-on glass (SOG) procedure. In another embodiment, the method includes fixing the photoresist pattern profile on the substrate using a sputter oxide (SO) procedure. The fixed photoresist pattern is then subjected to a microscopy procedure, typically transmission electron microscopy (TEM), to measure the exact linewidth and other dimensions of the profile. The method prevents distortion of the profile during fixation and facilitates an accurate determination of the profile dimensions.

Abstract translation: 一种用于在光刻期间测量晶片衬底上的光致抗蚀剂图案轮廓的尺寸的新的和改进的方法，用于在衬底上制造集成电路。 根据一个实施例，该方法包括使用旋涂玻璃（SOG）程序将光致抗蚀剂图案轮廓固定在基底上。 在另一个实施例中，该方法包括使用溅射氧化物（SO）程序将光致抗蚀剂图案轮廓固定在基底上。 然后将固定的光致抗蚀剂图案进行显微镜程序，通常是透射电子显微镜（TEM），以测量轮廓的精确线宽和其他尺寸。 该方法可防止固定过程中的轮廓变形，并有助于精确确定轮廓尺寸。

公开(公告)号：US20050014362A1

公开(公告)日：2005-01-20

申请号：US10915633

申请日：2004-08-10

Applicant: Bang-Chien Ho ,  Jian-Hong Chen ,  Tsang-Jiuh Wu ,  Li-Te Lin ,  Li-Chih Chao ,  Hua-Tai Lin ,  Shyue-Sheng Lu

Inventor： Bang-Chien Ho ,  Jian-Hong Chen ,  Tsang-Jiuh Wu ,  Li-Te Lin ,  Li-Chih Chao ,  Hua-Tai Lin ,  Shyue-Sheng Lu

IPC: H01L21/768 ,  H01L21/4763

CPC classification number: H01L21/76808

Abstract: A method of fabricating semiconductor devices using dual damascene processes to form plugs in the via holes composed of various high etch materials and bottom anti-reflection coating (BARC) materials. After via hole etch, a layer of high etch rate plug material is spin coated to fill the via holes. Next, a layer of photoresist is applied. The photoresist is then exposed through a mask and developed to form an etch opening. Using the remaining photoresist as an etch mask and with a bottom anti-reflection coating (BARC) as protection, the oxide or low k layer is etched to form subsequent wiring. The etch step is known as a damascene etch step. The remaining photoresist is removed and the trench/via openings are filled with metal forming inlaid metal interconnect wiring and contact vias.

Abstract translation: 使用双镶嵌工艺制造半导体器件的方法来在由各种高蚀刻材料和底部抗反射涂层（BARC）材料构成的通孔中形成插塞。 在通孔蚀刻之后，旋涂一层高蚀刻速率的塞材料以填充通孔。 接下来，施加一层光致抗蚀剂。 然后将光致抗蚀剂通过掩模曝光并显影以形成蚀刻开口。 使用剩余的光致抗蚀剂作为蚀刻掩模和底部防反射涂层（BARC）作为保护，氧化物或低k层被蚀刻以形成后续布线。 蚀刻步骤被称为镶嵌蚀刻步骤。 去除剩余的光致抗蚀剂，并且通过金属形成金属互连布线和接触通孔填充沟槽/通孔开口。

公开(公告)号：US06682858B2

公开(公告)日：2004-01-27

申请号：US09946987

申请日：2001-09-06

Applicant: Hua-Tai Lin

Inventor： Hua-Tai Lin

IPC: G03F900

CPC classification number: G03F7/2022 ,  G03F1/28 ,  G03F1/34 ,  G03F1/70

Abstract: A phase shifting mask set and method of using the phase shifting mask set to pattern a layer of negative photoresist. The mask set comprises a first phase shifting mask and a second phase shifting mask. The first and second phase shifting masks have regions of 90° phase shift and −90° phase shift in the contact hole regions of the masks. In the second phase shift mask the phase shift regions are rotated 90° spatially with respect to the phase shift regions of the first phase shift mask. A layer of negative photoresist is exposed with the first and second phase shift masks and developed to form the photoresist pattern used to form contact holes.

Abstract translation: 一种相移掩模集和使用相移掩模集合来对一层负性光致抗蚀剂进行图案化的方法。 掩模组包括第一相移掩模和第二相移掩模。 第一和第二相移掩模在掩模的接触孔区域中具有90°相移和-90°相移的区域。 在第二相移掩模中，相移相对于第一相移掩模的相移区域在空间上旋转90°。 用第一和第二相移掩模露出一层负性光致抗蚀剂，并显影以形成用于形成接触孔的光致抗蚀剂图案。

公开(公告)号：US06183916B2

公开(公告)日：2001-02-06

申请号：US09395283

申请日：1999-09-13

Applicant: Chen-Cheng Kuo ,  Hua-Tai Lin ,  Chia-Hui Lin

Inventor： Chen-Cheng Kuo ,  Hua-Tai Lin ,  Chia-Hui Lin

IPC: G03F900

CPC classification number: G03F1/30 ,  G03F1/36

Abstract: A method of forming an alternative phase shifting mask and forming a circuit pattern on a wafer using the mask are described. Optical proximity correction is added to a data file, in which a description of a circuit pattern has been stored, to obtain a first modified data file. The first modified data file is then separated into a second modified data file, for regions of the mask having dense line/space patterns, and a third modified data file, for regions of the mask having isolated line space patterns. Critical dimension bias is then added to the second modified data file forming a fourth modified data file. The third modified data file and the fourth modified data file are then merged into a single fifth modified data file. The fifth modified data file is then is then converted to an alternative phase shift data file. An alternative phase shift mask is then formed from the alternative phase shift data file. The alternative phase shift mask has then been corrected for optical proximity effect and critical dimension bias has been added. This alternative phase shift mask can then be used in forming the circuit pattern on an integrated circuit wafer.

Abstract translation: 描述了使用掩模形成替代的相移掩模并在晶片上形成电路图案的方法。 光学邻近校正被添加到已经存储电路图案的描述的数据文件中，以获得第一修改的数据文件。 然后，对于具有密集线/空间图案的掩模区域和第三修改数据文件，第一修改数据文件被分成第二修改数据文件，对于具有隔离行空间图案的掩码区域，第二修改数据文件被分隔成第二修改数据文件。 然后将关键尺寸偏差添加到形成第四修改数据文件的第二修改数据文件中。 然后将第三修改数据文件和第四修改数据文件合并到单个第五修改数据文件中。 然后将第五修改的数据文件转换成替代的相移数据文件。 然后从替代相移数据文件形成替代的相移掩模。 然后对于光学邻近效应校正了替代相移掩模，并且添加了临界尺寸偏差。 然后可以将该替代的相移掩模用于形成集成电路晶片上的电路图案。

公开(公告)号：US6133613A

公开(公告)日：2000-10-17

申请号：US18100

申请日：1998-02-03

Applicant: Liang-Gi Yao ,  John Chin-Hsiang Lin ,  Hua-Tai Lin

Inventor： Liang-Gi Yao ,  John Chin-Hsiang Lin ,  Hua-Tai Lin

IPC: H01L21/027 ,  H01L21/3213 ,  H01L23/58

CPC classification number: H01L21/32139 ,  H01L21/0276

Abstract: The present invention provides an anti-reflection film for lithographic application on tungsten-silicide containing substrate. In one embodiment of the present invention, a structure for improving lithography patterning in integrated circuit comprises a tungsten-silicide layer, a diaphanous layer located above the tungsten-silicide layer, an anti-reflection layer located above the diaphanous layer, and a photoresist layer located above the anti-reflection layer for patterning the integrated circuit pattern.

Abstract translation: 本发明提供了一种用于在含硅化钨的衬底上的光刻应用的抗反射膜。 在本发明的一个实施例中，用于改善集成电路中的光刻图案化的结构包括钨硅化物层，位于硅化钨层上方的透明层，位于透光层上方的抗反射层，以及光致抗蚀剂层 位于用于图案化集成电路图案的防反射层之上。

公开(公告)号：US6037276A

公开(公告)日：2000-03-14

申请号：US958462

申请日：1997-10-27

Applicant: Hua-Tai Lin ,  Erik S. Jeng ,  Liang-Gi Yao

Inventor： Hua-Tai Lin ,  Erik S. Jeng ,  Liang-Gi Yao

IPC: H01L21/3213 ,  H01L21/31

CPC classification number: H01L21/32139

Abstract: A method for improving the patterning process of a conductive layer using a dual-layer cap of oxynitride and silicon nitride. The oxynitride layer acts as a BARC (Bottom Anti-Reflective Coating) to improve photolithography process performance. The oxynitride is formed by plasma-enhanced chemical vapor deposition.

Abstract translation: 使用氮氧化硅和氮化硅的双层盖来改善导电层的图案化工艺的方法。 氧氮化物层用作BARC（底部防反射涂层）以改善光刻工艺性能。 氧氮化物通过等离子体增强化学气相沉积形成。

公开(公告)号：US20130205265A1

公开(公告)日：2013-08-08

申请号：US13368919

申请日：2012-02-08

Applicant: Cheng-Cheng Kuo ,  Ching-Che Tsai ,  Tzu-Chun Lo ,  Chih-Wei Hsu ,  Hua-Tai Lin ,  Tsai-Sheng Gau ,  Wen-Chun Huang ,  Chih-Shiang Chou ,  Hsin-Chang Lee ,  Kuei Shun Chen

Inventor： Cheng-Cheng Kuo ,  Ching-Che Tsai ,  Tzu-Chun Lo ,  Chih-Wei Hsu ,  Hua-Tai Lin ,  Tsai-Sheng Gau ,  Wen-Chun Huang ,  Chih-Shiang Chou ,  Hsin-Chang Lee ,  Kuei Shun Chen

IPC: G06F17/50

CPC classification number: G03F7/70441 ,  G03F7/70125

Abstract: A method of optical proximity correction (OPC) convergence control that includes providing a lithography system having a photomask and an illuminator. The method further includes performing an exposure by the illuminator on the photomask. Also, the method includes optimizing an optical illuminator setting for the lithography system with a defined gate pitch in a first direction in a first template. Additionally, the method includes determining OPC correctors to converge the OPC results with a target edge placement error (EPE) to produce a first OPC setting for the first template. The first OPC setting targets a relatively small EPE and mask error enhancement factor (MEEF)of the defined gate pitch in the first template. In addition, the method includes checking the first OPC setting for a relatively small EPE, MEEF and DOM consistency with the first template of the defined gate pitch in a second, adjacent template.

Abstract translation: 一种光学邻近校正（OPC）会聚控制的方法，包括提供具有光掩模和照明器的光刻系统。 该方法还包括执行照明器在光掩模上的曝光。 此外，该方法包括在第一模板中以第一方向限定的门间距优化光刻系统的光照射器设置。 此外，该方法包括确定OPC校正器以使目标边缘放置误差（EPE）收敛OPC结果，以产生第一模板的第一OPC设置。 第一个OPC设置针对第一个模板中定义的门间距的相对较小的EPE和掩模误差增强因子（MEEF）。 此外，该方法包括在第二相邻模板中检查与相对小的EPE，MEEF和DOM一致性的第一OPC设置与限定的门间距的第一模板。

公开(公告)号：US07972761B2

公开(公告)日：2011-07-05

申请号：US11462413

申请日：2006-08-04

Applicant: Hsien-Cheng Wang ,  Chin-Hsiang Lin ,  H. J. Lee ,  Ching-Yu Chang ,  Hua-Tai Lin ,  Burn Jeng Lin

Inventor： Hsien-Cheng Wang ,  Chin-Hsiang Lin ,  H. J. Lee ,  Ching-Yu Chang ,  Hua-Tai Lin ,  Burn Jeng Lin

IPC: G03F7/004 ,  G03F7/30

CPC classification number: G03F7/0397 ,  G03F7/0045 ,  G03F7/0392 ,  G03F7/30 ,  G03F7/38 ,  G03F7/70858 ,  Y10S430/106 ,  Y10S430/111

Abstract: A material for use in lithography processing includes a polymer that turns soluble to a base solution in response to reaction with acid and a plurality of magnetically amplified generators (MAGs) each having a magnetic element and each decomposing to form acid bonded with the magnetic element in response to radiation energy.

Abstract translation: 用于光刻处理的材料包括响应于与酸的反应而变成可溶于碱溶液的聚合物和多个具有磁性元素的磁放大发生器（MAG），并分别与磁性元件形成酸结合 响应辐射能量。