Invention Grant
- Patent Title: Semiconductor light emitting device, its manufacturing method, semiconductor device and its manufacturing method
- Patent Title (中): 半导体发光器件及其制造方法，半导体器件及其制造方法
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Application No.: US13857764Application Date: 2013-04-05
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Publication No.: US08587004B2Publication Date: 2013-11-19
- Inventor: Osamu Goto , Takeharu Asano , Yasuhiko Suzuki , Motonobu Taketani , Katsuyoshi Shibuya , Takashi Mizuno , Tsuyoshi Tojo , Shiro Uchida , Masao Ikeda
- Applicant: Sony Corporation
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Dentons US LLP
- Priority: JP2000-401998 20001228; JP2001-271947 20010907
- Main IPC: H01L33/00
- IPC: H01L33/00
Abstract:
A semiconductor light emitting device made of nitride III-V compound semiconductors including an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.
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