公开(公告)号：US20140312335A1

公开(公告)日：2014-10-23

申请号：US14354069

申请日：2012-10-25

Applicant: Sony Corporation

Inventor： Osamu Goto ,  Daisuke Hobara ,  Yosuke Murakami

IPC: H01L51/00 ,  H01L51/42 ,  H01L51/50 ,  H01L51/05

CPC classification number: H01L51/0003 ,  H01L51/0012 ,  H01L51/0558 ,  H01L51/42 ,  H01L51/50

Abstract: Provided is a manufacturing method of an organic semiconductor element, the method including supplying an unsaturated organic solution obtained by dissolving an organic compound in a solvent to a growth control region and at least one nucleation control region of a base body having, on one principal plane, the growth control region and the nucleation control region which is provided on one side of the growth control region to be coupled with the growth control region, and allowing an organic semiconductor single crystal thin film composed of the organic compound to grow by evaporating the solvent of the organic solution.

Abstract translation: 提供一种有机半导体元件的制造方法，该方法包括将通过将有机化合物溶解在溶剂中而获得的不饱和有机溶液提供给生长控制区域和至少一个基体的成核控制区域，所述成核控制区域在一个主平面上 ，生长控制区域和成核控制区域，其设置在与生长控制区域耦合的生长控制区域的一侧，并且使由有机化合物组成的有机半导体单晶薄膜通过蒸发溶剂而生长 的有机溶液。

公开(公告)号：US08587004B2

公开(公告)日：2013-11-19

申请号：US13857764

申请日：2013-04-05

Applicant: Sony Corporation

Inventor： Osamu Goto ,  Takeharu Asano ,  Yasuhiko Suzuki ,  Motonobu Taketani ,  Katsuyoshi Shibuya ,  Takashi Mizuno ,  Tsuyoshi Tojo ,  Shiro Uchida ,  Masao Ikeda

IPC: H01L33/00

CPC classification number: H01L33/0075 ,  B82Y20/00 ,  H01L33/04 ,  H01L33/06 ,  H01L33/32 ,  H01S5/0425 ,  H01S5/2004 ,  H01S5/2013 ,  H01S5/3201 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/12

Abstract: A semiconductor light emitting device made of nitride III-V compound semiconductors including an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.

Abstract translation: 由氮化物III-V族化合物半导体构成的半导体发光元件，该半导体发光元件包括由含In和Ga的第一氮化物III-V族化合物半导体构成的有源层，例如InGaN; 由包含In和Ga的不同于第一氮化物III-V化合物半导体的第二氮化物III-V化合物半导体制成的中间层，例如InGaN; 以及由含有Al和Ga的第三氮化物III-V化合物半导体（例如p型AlGaN）制成的覆盖层，其以顺序接触沉积。

公开(公告)号：US20140264314A1

公开(公告)日：2014-09-18

申请号：US14354062

申请日：2012-10-26

Applicant: Sony Corporation

Inventor： Osamu Goto ,  Yosuke Murakami

IPC: H01L51/05 ,  H01L27/28 ,  H01L51/00

CPC classification number: H01L51/0096 ,  H01L27/283 ,  H01L51/0003 ,  H01L51/0558

Abstract: An organic single crystal thin film includes an organic single crystal formed on a substrate across a boundary between a first region of the substrate and a second region of the substrate that is adjacent to the first region. The first region has a different shape or size than the second region.

Abstract translation: 有机单晶薄膜包括在衬底上形成的有机单晶，跨越衬底的第一区域和与第一区域相邻的衬底的第二区域之间的边界。 第一区域具有与第二区域不同的形状或尺寸。