公开(公告)号：US10903376B2

公开(公告)日：2021-01-26

申请号：US16102115

申请日：2018-08-13

Applicant: Sony Corporation ,  SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Tomomasa Watanabe ,  Hiroshi Yoshida ,  Masao Ikeda ,  Shiro Uchida ,  Ichiro Nomachi ,  Masayuki Arimochi ,  Hui Yang ,  Shulong Lu ,  Xinhe Zheng

IPC: H01L31/0224 ,  H01L33/42 ,  H01L33/32 ,  H01L31/0693 ,  H01L31/18 ,  H01S5/042 ,  H01L31/0304 ,  H01L33/00 ,  H01L33/30 ,  H01L33/38 ,  H01S5/18 ,  H01S5/343 ,  H01S5/183

Abstract: A light receiving/emitting element 11 includes: a light receiving/emitting layer 21 in which a plurality of compound semiconductor layers are stacked; and an electrode 30 having a first surface 30A and a second surface 30B and made of a transparent conductive material, in which the second surface faces the first surface 30A, and the electrode is in contact, at the first surface 30A, with the light receiving/emitting layer 21. The transparent conductive material contains an additive made of one or more metals, or a compound thereof, selected from the group consisting of molybdenum, tungsten, chromium, ruthenium, titanium, nickel, zinc, iron, and copper, and concentration of the additive contained in the transparent conductive material near an interface to the first surface 30A of the electrode 30 is higher than concentration of the additive contained in the transparent conductive material near the second surface 30B of the electrode 30.

公开(公告)号：US10147755B2

公开(公告)日：2018-12-04

申请号：US15784793

申请日：2017-10-16

Applicant: Sony Corporation

Inventor： Keiji Mabuchi ,  Hideshi Abe ,  Hideo Kanbe ,  Shiro Uchida

IPC: H01L27/146 ,  H01L27/30 ,  G01J5/20 ,  G01J3/28 ,  G01J3/36

Abstract: A solid-state imaging device includes an Si substrate in which a photoelectric conversion unit that photoelectrically converts visible light incident from a back surface side is formed, and a lower substrate provided under the Si substrate and configured to photoelectrically convert infrared light incident from the back surface side.

公开(公告)号：US20160181305A1

公开(公告)日：2016-06-23

申请号：US15054677

申请日：2016-02-26

Applicant: Sony Corporation

Inventor： Keiji Mabuchi ,  Hideshi Abe ,  Hideo Kanbe ,  Shiro Uchida

IPC: H01L27/146

CPC classification number: H01L27/14652 ,  G01J3/2803 ,  G01J3/36 ,  G01J5/20 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14647 ,  H01L27/14649 ,  H01L27/14683 ,  H01L27/14687 ,  H01L27/1469 ,  H01L27/30 ,  H01L27/307

Abstract: A solid-state imaging device includes an Si substrate in which a photoelectric conversion unit that photoelectrically converts visible light incident from a back surface side is formed, and a lower substrate provided under the Si substrate and configured to photoelectrically convert infrared light incident from the back surface side.

公开(公告)号：US20140345681A1

公开(公告)日：2014-11-27

申请号：US14345006

申请日：2012-09-03

Applicant: SONY CORPORATION ,  SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Hiroshi Yoshida ,  Masao Ikeda ,  Shiro Uchida ,  Takashi Tange ,  Masaru Kuramoto ,  Masayuki Arimochi ,  Hui Yang ,  Shulong Lu ,  Xinhe Zheng

IPC: H01L31/0725 ,  H01L31/0735

CPC classification number: H01L31/0725 ,  H01L31/0687 ,  H01L31/06875 ,  H01L31/0735 ,  H01S5/0262 ,  H01S5/0425 ,  H01S5/18325 ,  H01S5/3095 ,  H01S5/4043 ,  Y02E10/544

Abstract: There is provided a multi-junction solar cell that reduces contact resistance of a junction portion and is capable of performing energy conversion with high efficiency. The multi-junction solar cell includes a plurality of sub-cells 11, 12, 13, and 14 that are laminated, the plurality of sub-cells 11, 12, 13, and 14 being configured of a plurality of compound semiconductor layers 11A, 11B, 11C, 12A, 12B, 12C, 13A, 13B, 13C, 14A, 14B, and 14C that are laminated. Amorphous connection layers 20A and 20B made of electrically-conductive material are provided in at least one place between the sub-cells 12 and 13 adjacent to each other.

Abstract translation: 提供了一种降低接合部的接触电阻并且能够以高效率进行能量转换的多结太阳能电池。 多结太阳能电池包括层叠的多个子电池11,12,13和14，多个子电池11,12,13,14由多个化合物半导体层11A， 11B，11C，12A，12B，12C，13A，13B，13C，14A，14B和14C。 由导电材料制成的无定形连接层20A和20B设置在彼此相邻的子电池12和13之间的至少一个位置。

公开(公告)号：US11296245B2

公开(公告)日：2022-04-05

申请号：US16711084

申请日：2019-12-11

Applicant: Sony Corporation

Inventor： Shiro Uchida ,  Hideshi Abe ,  Tomomasa Watanabe ,  Hiroshi Yoshida

IPC: H01L31/02 ,  H01L31/0224 ,  H01L31/105 ,  H01L27/144 ,  H01L27/146

Abstract: A light receiving element includes a surface recombination prevention layer composed of a first compound semiconductor on which light is incident; a photoelectric conversion layer composed of a second compound semiconductor; and a compound semiconductor layer composed of a third compound semiconductor, the surface recombination prevention layer having a thickness of 30 nm or less. Also, there are provided an image capturing element including the light receiving element, and an image capturing apparatus including the image capturing element.

公开(公告)号：US20180040662A1

公开(公告)日：2018-02-08

申请号：US15784793

申请日：2017-10-16

Applicant: Sony Corporation

Inventor： Keiji Mabuchi ,  Hideshi Abe ,  Hideo Kanbe ,  Shiro Uchida

IPC: H01L27/146 ,  G01J5/20 ,  G01J3/36 ,  G01J3/28

CPC classification number: H01L27/14652 ,  G01J3/2803 ,  G01J3/36 ,  G01J5/20 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14647 ,  H01L27/14649 ,  H01L27/14683 ,  H01L27/14687 ,  H01L27/1469 ,  H01L27/30 ,  H01L27/307

Abstract: A solid-state imaging device includes an Si substrate in which a photoelectric conversion unit that photoelectrically converts visible light incident from a back surface side is formed, and a lower substrate provided under the Si substrate and configured to photoelectrically convert infrared light incident from the back surface side.

公开(公告)号：US09312300B2

公开(公告)日：2016-04-12

申请号：US14524182

申请日：2014-10-27

Applicant: Sony Corporation

Inventor： Keiji Mabuchi ,  Hideshi Abe ,  Hideo Kanbe ,  Shiro Uchida

IPC: H01L31/062 ,  H01L31/113 ,  H01L27/146 ,  G01J5/20

CPC classification number: H01L27/14652 ,  G01J3/2803 ,  G01J3/36 ,  G01J5/20 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14647 ,  H01L27/14649 ,  H01L27/14683 ,  H01L27/14687 ,  H01L27/1469 ,  H01L27/30 ,  H01L27/307

Abstract: A solid-state imaging device includes an Si substrate in which a photoelectric conversion unit that photoelectrically converts visible light incident from a back surface side is formed, and a lower substrate provided under the Si substrate and configured to photoelectrically convert infrared light incident from the back surface side.

Abstract translation: 一种固态成像装置，其特征在于，具备：Si基板，在所述Si基板上形成有光电转换从背面侧入射的可见光的光电转换部，以及设置在所述Si基板的下方的基板，其被配置为对从背面入射的红外光进行光电转换 表面

公开(公告)号：US20150179840A1

公开(公告)日：2015-06-25

申请号：US14419355

申请日：2013-06-04

Applicant: Sony Corporation ,  SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Tomomasa Watanabe ,  Hiroshi Yoshida ,  Masao Ikeda ,  Shiro Uchida ,  Masayuki Arimochi ,  Ichiro Nomachi ,  Hui Yang ,  Shulong Lu ,  Xinhe Zheng

IPC: H01L31/0224 ,  H01S5/343 ,  H01S5/18 ,  H01L31/0304 ,  H01L33/30 ,  H01L33/32 ,  H01L33/42 ,  H01L33/38 ,  H01S5/042 ,  H01L33/00

CPC classification number: H01L31/022475 ,  H01L31/022408 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/022483 ,  H01L31/0304 ,  H01L31/03044 ,  H01L31/03046 ,  H01L31/03048 ,  H01L31/0693 ,  H01L31/1844 ,  H01L31/1884 ,  H01L33/0025 ,  H01L33/30 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H01S5/0425 ,  H01S5/18 ,  H01S5/183 ,  H01S5/34313 ,  H01S5/34333 ,  Y02E10/544

Abstract: A light receiving/emitting element 11 includes: a light receiving/emitting layer 21 in which a plurality of compound semiconductor layers are stacked; and an electrode 30 having a first surface 30A and a second surface 30B and made of a transparent conductive material, in which the second surface faces the first surface 30A, and the electrode is in contact, at the first surface 30A, with the light receiving/emitting layer 21. The transparent conductive material contains an additive made of one or more metals, or a compound thereof, selected from the group consisting of molybdenum, tungsten, chromium, ruthenium, titanium, nickel, zinc, iron, and copper, and concentration of the additive contained in the transparent conductive material near an interface to the first surface 30A of the electrode 30 is higher than concentration of the additive contained in the transparent conductive material near the second surface 30B of the electrode 30.

Abstract translation: 光接收/发射元件11包括：多个化合物半导体层堆叠的光接收/发射层21; 以及具有第一表面30A和第二表面30B并由透明导电材料制成的电极30，其中第二表面面向第一表面30A，并且电极在第一表面30A处接触，光接收 发光层21.透明导电材料含有由选自钼，钨，铬，钌，钛，镍，锌，铁和铜的一种或多种金属或其化合物制成的添加剂，以及 在与电极30的第一表面30A的界面附近的透明导电材料中所含的添加剂的浓度高于在电极30的第二表面30B附近的透明导电材料中所含的添加剂的浓度。

公开(公告)号：US20150122995A1

公开(公告)日：2015-05-07

申请号：US14524182

申请日：2014-10-27

Applicant: Sony Corporation

Inventor： Keiji Mabuchi ,  Hideshi Abe ,  Hideo Kanbe ,  Shiro Uchida

IPC: H01L27/146 ,  G01J5/20

CPC classification number: H01L27/14652 ,  G01J3/2803 ,  G01J3/36 ,  G01J5/20 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14647 ,  H01L27/14649 ,  H01L27/14683 ,  H01L27/14687 ,  H01L27/1469 ,  H01L27/30 ,  H01L27/307

Abstract: A solid-state imaging device includes an Si substrate in which a photoelectric conversion unit that photoelectrically converts visible light incident from a back surface side is formed, and a lower substrate provided under the Si substrate and configured to photoelectrically convert infrared light incident from the back surface side.

Abstract translation: 一种固态成像装置，其特征在于，具备：Si基板，在所述Si基板上形成有光电转换从背面侧入射的可见光的光电转换部，以及设置在所述Si基板的下方的基板，其被配置为对从背面入射的红外光进行光电转换 表面

公开(公告)号：US08587004B2

公开(公告)日：2013-11-19

申请号：US13857764

申请日：2013-04-05

Applicant: Sony Corporation

Inventor： Osamu Goto ,  Takeharu Asano ,  Yasuhiko Suzuki ,  Motonobu Taketani ,  Katsuyoshi Shibuya ,  Takashi Mizuno ,  Tsuyoshi Tojo ,  Shiro Uchida ,  Masao Ikeda

IPC: H01L33/00

CPC classification number: H01L33/0075 ,  B82Y20/00 ,  H01L33/04 ,  H01L33/06 ,  H01L33/32 ,  H01S5/0425 ,  H01S5/2004 ,  H01S5/2013 ,  H01S5/3201 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/12

Abstract: A semiconductor light emitting device made of nitride III-V compound semiconductors including an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.

Abstract translation: 由氮化物III-V族化合物半导体构成的半导体发光元件，该半导体发光元件包括由含In和Ga的第一氮化物III-V族化合物半导体构成的有源层，例如InGaN; 由包含In和Ga的不同于第一氮化物III-V化合物半导体的第二氮化物III-V化合物半导体制成的中间层，例如InGaN; 以及由含有Al和Ga的第三氮化物III-V化合物半导体（例如p型AlGaN）制成的覆盖层，其以顺序接触沉积。