Invention Grant
US08624269B2 Radiation-emitting thin-film semiconductor chip and method of producing a radiation-emitting thin film semiconductor chip 有权
辐射发射薄膜半导体芯片和辐射发射薄膜半导体芯片的制造方法

  • Patent Title: Radiation-emitting thin-film semiconductor chip and method of producing a radiation-emitting thin film semiconductor chip
  • Patent Title (中): 辐射发射薄膜半导体芯片和辐射发射薄膜半导体芯片的制造方法
  • Application No.: US12989470
    Application Date: 2009-04-09
  • Publication No.: US08624269B2
    Publication Date: 2014-01-07
  • Inventor: Ralph Wirth
  • Applicant: Ralph Wirth
  • Applicant Address: DE Regensburg
  • Assignee: OSRAM Opto Semiconductors GmbH
  • Current Assignee: OSRAM Opto Semiconductors GmbH
  • Current Assignee Address: DE Regensburg
  • Agent Cozen O'Connor
  • Priority: DE102008021620 20080430
  • International Application: PCT/DE2009/000509 WO 20090409
  • International Announcement: WO2009/132614 WO 20091105
  • Main IPC: H01L27/15
  • IPC: H01L27/15
Radiation-emitting thin-film semiconductor chip and method of producing a radiation-emitting thin film semiconductor chip
Abstract:
A radiation-emitting thin film semiconductor chip is herein described which comprises a first region with a first active zone, a second region, separated laterally from the first region by a space, with a second active zone which extends parallel to the first active zone in a different plane, and a compensating layer, which is located in the second region at the level of the first active zone, the compensating layer not containing any semiconductor material.
Information query
Patent Agency Ranking
0/0