Invention Grant
- Patent Title: Radiation-emitting thin-film semiconductor chip and method of producing a radiation-emitting thin film semiconductor chip
- Patent Title (中): 辐射发射薄膜半导体芯片和辐射发射薄膜半导体芯片的制造方法
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Application No.: US12989470Application Date: 2009-04-09
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Publication No.: US08624269B2Publication Date: 2014-01-07
- Inventor: Ralph Wirth
- Applicant: Ralph Wirth
- Applicant Address: DE Regensburg
- Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee Address: DE Regensburg
- Agent Cozen O'Connor
- Priority: DE102008021620 20080430
- International Application: PCT/DE2009/000509 WO 20090409
- International Announcement: WO2009/132614 WO 20091105
- Main IPC: H01L27/15
- IPC: H01L27/15

Abstract:
A radiation-emitting thin film semiconductor chip is herein described which comprises a first region with a first active zone, a second region, separated laterally from the first region by a space, with a second active zone which extends parallel to the first active zone in a different plane, and a compensating layer, which is located in the second region at the level of the first active zone, the compensating layer not containing any semiconductor material.
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