Invention Grant
- Patent Title: Method for clearing native oxide
- Patent Title (中): 清除天然氧化物的方法
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Application No.: US12129978Application Date: 2008-05-30
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Publication No.: US08642477B2Publication Date: 2014-02-04
- Inventor: Yen-Chu Chen , Teng-Chun Tsai , Chien-Chung Huang , Keng-Jen Liu
- Applicant: Yen-Chu Chen , Teng-Chun Tsai , Chien-Chung Huang , Keng-Jen Liu
- Applicant Address: TW Science-Based Industrial Park, Hsinchu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsinchu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L21/302
- IPC: H01L21/302 ; C23F1/00
Abstract:
A method for clearing native oxide is described. A substrate is provided, including an exposed portion whereon a native oxide layer has been formed. A clearing process is performed to the substrate using nitrogen trifluoride (NF3) and ammonia (NH3) as a reactant gas, wherein the volumetric flow rate of NF3 is greater than that of NH3.
Public/Granted literature
- US20090298294A1 METHOD FOR CLEARING NATIVE OXIDE Public/Granted day:2009-12-03
Information query
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