Invention Grant
- Patent Title: Process for the continuous production of polycrystalline high-purity silicon granules
- Patent Title (中): 连续生产多晶高纯度硅颗粒的工艺
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Application No.: US12111291Application Date: 2008-04-29
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Publication No.: US08722141B2Publication Date: 2014-05-13
- Inventor: Dieter Weidhaus , Rainer Hauswirth , Harald Hertlein
- Applicant: Dieter Weidhaus , Rainer Hauswirth , Harald Hertlein
- Applicant Address: DE Munich
- Assignee: Wacker Chemie AG
- Current Assignee: Wacker Chemie AG
- Current Assignee Address: DE Munich
- Agency: Brooks Kushman P.C.
- Priority: DE102007021003 20070504
- Main IPC: B05D7/00
- IPC: B05D7/00 ; B05C11/00

Abstract:
High-purity polysilicon granules are prepared by depositing reaction gas on silicon granules in a fluidized bed reactor having: a reactor space comprising at least two zones lying one above the other, the lower zone weakly fluidized by introduction of a silicon-free gas into silicon granules in the lower zone by a plurality of individual dilution gas nozzles, and a second, reaction zone directly abutting the lower zone, the reaction zone heated via its outwardly bounding wall, introducing silicon-containing reaction gas as a vertical high speed gas jet into the reaction zone by reaction gas nozzle(s), forming local reaction gas jets surrounded by bubble-forming fluidized bed, gas decomposing leading to particle growth, wherein the reaction gas has fully or almost fully reacted to chemical equilibrium conversion before reaching the wall or bed surface.
Public/Granted literature
- US20080299291A1 Process For The Continuous Production Of Polycrystalline High-Purity Silicon Granules Public/Granted day:2008-12-04
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