Invention Grant
US08835869B2 Ion sources and methods for generating an ion beam with controllable ion current density distribution
有权
用于产生具有可控离子电流密度分布的离子束的离子源和方法
- Patent Title: Ion sources and methods for generating an ion beam with controllable ion current density distribution
- Patent Title (中): 用于产生具有可控离子电流密度分布的离子束的离子源和方法
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Application No.: US13448282Application Date: 2012-04-16
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Publication No.: US08835869B2Publication Date: 2014-09-16
- Inventor: Rustam Yevtukhov , Boris L. Druz , Viktor Kanarov , Alan V. Hayes
- Applicant: Rustam Yevtukhov , Boris L. Druz , Viktor Kanarov , Alan V. Hayes
- Applicant Address: US NY Plainview
- Assignee: Veeco Instruments, Inc.
- Current Assignee: Veeco Instruments, Inc.
- Current Assignee Address: US NY Plainview
- Agency: Wood, Herron & Evans, LLP
- Main IPC: H01J49/10
- IPC: H01J49/10 ; H01J1/50 ; H01J37/08 ; H01J37/305 ; H01L21/311 ; H01J27/18

Abstract:
Ion sources and methods for generating an ion bean with a controllable ion current density distribution. The ion source includes a discharge chamber having an optical grid position proximate at a first end and a re-entrant vessel positioned proximate a second end that opposes the first end. A plasma shaper extends from the re-entrant vessel and into the plasma discharge chamber. A position of the plasma shaper is adjustable relative to the grid-based ion optic such that the plasma shaper may operably change a plasma density distribution within the discharge chamber.
Public/Granted literature
- US20120211166A1 ION SOURCES AND METHODS FOR GENERATING AN ION BEAM WITH CONTROLLABLE ION CURRENT DENSITY DISTRIBUTION Public/Granted day:2012-08-23
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