Invention Grant
- Patent Title: In-situ formation of silicon and tantalum containing barrier
- Patent Title (中): 硅和钽的屏障原位形成
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Application No.: US13167857Application Date: 2011-06-24
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Publication No.: US08946083B2Publication Date: 2015-02-03
- Inventor: Shiu-Ko JangJian , Ting-Chun Wang , Szu-An Wu
- Applicant: Shiu-Ko JangJian , Ting-Chun Wang , Szu-An Wu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/3105 ; H01L21/768 ; H01L23/48
Abstract:
A method includes forming an opening in a dielectric layer, and forming a silicon rich layer on a surface of the dielectric layer. A portion of the silicon rich layer extends into the opening and contacts the dielectric layer. A tantalum-containing layer is formed over and the contacting the silicon rich layer. An annealing is performed to react the tantalum-containing layer with the silicon rich layer, so that a tantalum-and-silicon containing layer is formed.
Public/Granted literature
- US20120326312A1 In-Situ Formation of Silicon and Tantalum Containing Barrier Public/Granted day:2012-12-27
Information query
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