Invention Grant
- Patent Title: Thermal annealing process
- Patent Title (中): 热退火工艺
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Application No.: US13370907Application Date: 2012-02-10
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Publication No.: US08961918B2Publication Date: 2015-02-24
- Inventor: Shih-Wei Chang , Jeffrey D. Weinhold , Phillip D. Hustad , Peter Trefonas
- Applicant: Shih-Wei Chang , Jeffrey D. Weinhold , Phillip D. Hustad , Peter Trefonas
- Applicant Address: US MA Marlborough US MI Midland
- Assignee: Rohm and Haas Electronic Materials LLC,Dow Global Technologies LLC
- Current Assignee: Rohm and Haas Electronic Materials LLC,Dow Global Technologies LLC
- Current Assignee Address: US MA Marlborough US MI Midland
- Agent Thomas S. Deibert
- Main IPC: C01B15/14
- IPC: C01B15/14 ; C01B33/20 ; B05D3/02 ; B05D3/04
Abstract:
A method for processing a substrate is provided; wherein the method comprises applying a film of a copolymer composition, comprising a poly(styrene)-b-poly(dimethylsiloxane) block copolymer component to a surface of the substrate; optionally, baking the film; subjecting the film to a high temperature annealing process under particularized atmospheric conditions for a specified period of time; followed by a treatment of the annealed film to remove the poly(styrene) from the annealed film and to convert the poly(dimethylsiloxane) in the annealed film to SiOx.
Public/Granted literature
- US20130209344A1 Thermal annealing process Public/Granted day:2013-08-15
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