Invention Grant
US08974870B2 Fabrication of porogen residues free low-k materials with improved mechanical and chemical resistance
有权
制造残留游离的低k材料，具有改善的机械和化学耐受性
- Patent Title: Fabrication of porogen residues free low-k materials with improved mechanical and chemical resistance
- Patent Title (中): 制造残留游离的低k材料，具有改善的机械和化学耐受性
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Application No.: US13226208Application Date: 2011-09-06
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Publication No.: US08974870B2Publication Date: 2015-03-10
- Inventor: Mikhail Baklanov , Quoc Toan Le , Laurent Souriau , Patrick Verdonck
- Applicant: Mikhail Baklanov , Quoc Toan Le , Laurent Souriau , Patrick Verdonck
- Applicant Address: BE Leuven
- Assignee: IMEC
- Current Assignee: IMEC
- Current Assignee Address: BE Leuven
- Agency: Knobbe, Martens, Olson and Bear
- Main IPC: H05H1/00
- IPC: H05H1/00 ; B05D3/06 ; B05D3/02 ; C23C16/40 ; C23C16/56 ; H01L21/02 ; H01L21/3105 ; H01L21/316 ; H01L21/768
Abstract:
Methods for fabricating porous low-k materials are provided, such as plasma enhanced chemically vapor deposited (PE-CVD) and chemically vapor deposited (CVD) low-k films used as dielectric materials in between interconnect structures in semiconductor devices. More specifically, a new method is provided which results in a low-k material with significant improved chemical stability and improved elastic modulus, for a porosity obtained.
Public/Granted literature
- US20120052692A1 FABRICATION OF POROGEN RESIDUES FREE LOW-K MATERIALS WITH IMPROVED MECHANICAL AND CHEMICAL RESISTANCE Public/Granted day:2012-03-01
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