Invention Grant
US08981315B2 Ion beam device having gas introduction port disposed on structure maintained at ground potential
有权
离子束装置具有设置在保持在地电位的结构上的气体导入口
- Patent Title: Ion beam device having gas introduction port disposed on structure maintained at ground potential
- Patent Title (中): 离子束装置具有设置在保持在地电位的结构上的气体导入口
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Application No.: US14238397Application Date: 2012-05-28
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Publication No.: US08981315B2Publication Date: 2015-03-17
- Inventor: Hiroyuki Muto , Yoshimi Kawanami
- Applicant: Hiroyuki Muto , Yoshimi Kawanami
- Applicant Address: JP Tokyo
- Assignee: Hitachi High-Technologies Corporation
- Current Assignee: Hitachi High-Technologies Corporation
- Current Assignee Address: JP Tokyo
- Agency: Miles & Stockbridge P.C.
- Priority: JP2011-192271 20110905
- International Application: PCT/JP2012/003450 WO 20120528
- International Announcement: WO2013/035221 WO 20130314
- Main IPC: H01J37/28
- IPC: H01J37/28 ; H01J37/317 ; H01J37/08

Abstract:
To avoid a glow discharge during the use of a conventional gas ionization chamber, there is no alternative but to increase a gas pressure. Therefore, while a conventional gas ionization chamber is used, an ion current cannot be increased by raising a gas introduction pressure. An object of the present invention is to increase the ion current by raising the gas pressure and prevent an ion beam from being scattered by an ionization gas. The gas is supplied from a structure maintained at a ground potential to prevent the application of a high voltage to the vicinity of an ionization gas introduction port at which the gas pressure is relatively high. Further, the ionization gas existing in a region through which the ion beam passes is preferentially reduced by performing differential evacuation from a lens opening in a lens electrode that forms an acceleration/focusing lens.
Public/Granted literature
- US20140197329A1 ION BEAM DEVICE Public/Granted day:2014-07-17
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