Invention Grant
- Patent Title: High voltage metal-oxide-semiconductor transistor device
- Patent Title (中): 高压金属氧化物半导体晶体管器件
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Application No.: US13571366Application Date: 2012-08-10
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Publication No.: US08987813B2Publication Date: 2015-03-24
- Inventor: Chiu-Te Lee , Ke-Feng Lin , Chih-Chien Chang , Wei-Lin Chen , Chih-Chung Wang
- Applicant: Chiu-Te Lee , Ke-Feng Lin , Chih-Chien Chang , Wei-Lin Chen , Chih-Chung Wang
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/06 ; H01L29/423 ; H01L29/66 ; H01L29/08
Abstract:
A high voltage metal-oxide-semiconductor transistor device includes a substrate, at least an isolation structure formed in the substrate, a gate formed on the substrate, and a source region and a drain region formed in the substrate at respective sides of the gate. The isolation structure further includes a recess. The gate includes a first gate portion formed on a surface of the substrate and a second gate portion downwardly extending from the first gate portion and formed in the recess.
Public/Granted literature
- US20140042527A1 HIGH VOLTAGE METAL-OXIDE-SEMICONDUCTOR TRANSISTOR DEVICE Public/Granted day:2014-02-13
Information query
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