公开(公告)号：US20240429123A1

公开(公告)日：2024-12-26

申请号：US18824133

申请日：2024-09-04

Applicant: WEI-LIN CHEN ,  MING-YUAN KANG

Inventor： Wei-Lin Chen

IPC: H01L23/44 ,  H01L23/31 ,  H01L23/498 ,  H01L25/065

Abstract: An IC package comprising a substrate with a first vapor chamber; a semiconductor die with a top surface, the semiconductor die stacked over the substrate; wherein the first vapor chamber disposed under the semiconductor die, the first vapor chamber comprises a proximal portion and a distal portion, the proximal portion of the first vapor chamber is thermally coupled to a bottom surface of the semiconductor die; and an encapsulating case encapsulating the semiconductor die and the first vapor chamber, wherein the proximal portion of the first vapor chamber is within the encapsulating case, and the distal portion of the first vapor chamber outside the encapsulating case.

公开(公告)号：US20240030097A1

公开(公告)日：2024-01-25

申请号：US18223741

申请日：2023-07-19

Applicant: WEI-LIN CHEN ,  MING-YUAN KANG

Inventor： WEI-LIN CHEN

IPC: H01L23/427 ,  H01L23/31 ,  H01L23/433

CPC classification number: H01L23/427 ,  H01L23/3142 ,  H01L23/4334

Abstract: An IC package comprises a substrate; a semiconductor die with a top surface, wherein the semiconductor die is stacked over the substrate; a vapor chamber stacked over the semiconductor die, wherein the vapor chamber comprises a proximal portion and a distal portion, the proximal portion covers the top surface of the semiconductor die; and an encapsulating case encapsulating the substrate, the semiconductor die and the vapor chamber, wherein the proximal portion of the vapor chamber is within the encapsulating case, and the distal portion of the vapor chamber extends from a wall of the encapsulating case.

公开(公告)号：US08987813B2

公开(公告)日：2015-03-24

申请号：US13571366

申请日：2012-08-10

Applicant: Chiu-Te Lee ,  Ke-Feng Lin ,  Chih-Chien Chang ,  Wei-Lin Chen ,  Chih-Chung Wang

Inventor： Chiu-Te Lee ,  Ke-Feng Lin ,  Chih-Chien Chang ,  Wei-Lin Chen ,  Chih-Chung Wang

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/08

CPC classification number: H01L29/0653 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/66704 ,  H01L29/7825

Abstract: A high voltage metal-oxide-semiconductor transistor device includes a substrate, at least an isolation structure formed in the substrate, a gate formed on the substrate, and a source region and a drain region formed in the substrate at respective sides of the gate. The isolation structure further includes a recess. The gate includes a first gate portion formed on a surface of the substrate and a second gate portion downwardly extending from the first gate portion and formed in the recess.

Abstract translation: 高压金属氧化物半导体晶体管器件包括至少形成在衬底中的隔离结构的衬底，形成在衬底上的栅极，以及形成在栅极各侧的衬底中的源极区和漏极区。 隔离结构还包括凹部。 栅极包括形成在基板的表面上的第一栅极部分和从第一栅极部分向下延伸并形成在凹部中的第二栅极部分。

公开(公告)号：US07252368B2

公开(公告)日：2007-08-07

申请号：US10982499

申请日：2004-11-05

Applicant: Wei-Lin Chen ,  Hung-Sheng Hu

Inventor： Wei-Lin Chen ,  Hung-Sheng Hu

IPC: B41J2/05

CPC classification number: B41J2/14137 ,  B41J2/1601 ,  B41J2/1631 ,  B41J2/1642 ,  B41J2/1643

Abstract: The fluid injector includes a base, a first through hole, a fluid actuator, a passivation layer, and a thick hydrophobic film. The base includes a chamber and a surface. The first through hole communicates with the chamber, and is disposed in the base. The fluid actuator is disposed on the surface near the first through hole, and is located outside the chamber. The passivation layer is disposed on the surface. The thick hydrophobic film formed of a crosslink defines a second through hole, and is disposed on the passivation layer outside the chamber. The second through hole communicates with the first through hole.

Abstract translation: 流体注射器包括底座，第一通孔，流体致动器，钝化层和厚疏水膜。 底座包括一个腔室和一个表面。 第一通孔与腔室连通，并设置在基座中。 流体致动器设置在靠近第一通孔的表面上，并且位于室外。 钝化层设置在表面上。 由交联形成的厚疏水膜限定了第二通孔，并且设置在室外的钝化层上。 第二通孔与第一通孔连通。

公开(公告)号：US20050157091A1

公开(公告)日：2005-07-21

申请号：US11030396

申请日：2005-01-06

Applicant: Hung-Sheng Hu ,  Wei-Lin Chen ,  Ming-Chung Peng

Inventor： Hung-Sheng Hu ,  Wei-Lin Chen ,  Ming-Chung Peng

IPC: B41J2/16 ,  B41J2/05 ,  B41J2/04 ,  B41J2/17

CPC classification number: B41J2/1629 ,  B41J2/1603 ,  B41J2/1639

Abstract: A method for fabricating an enlarged fluid chamber using multiple sacrificial layers. The method comprises providing a plurality of patterned sacrificial layers between a substrate and a structural layer. A chamber neck is formed between a fluid chamber and a fluid channel using different sacrificial layers with different etching rates. The chamber neck can stabilize ejection of the fluid droplet. Additionally, a single print-head chip with different chamber sizes can also be formed, thereby ejecting droplets with different sizes.

Abstract translation: 一种使用多个牺牲层制造扩大的流体室的方法。 该方法包括在衬底和结构层之间提供多个图案化牺牲层。 使用具有不同蚀刻速率的不同牺牲层，在流体室和流体通道之间形成腔室颈部。 腔室颈部可以稳定液滴的喷射。 此外，还可以形成具有不同室尺寸的单个打印头芯片，从而喷射具有不同尺寸的液滴。

公开(公告)号：US20050093936A1

公开(公告)日：2005-05-05

申请号：US10982499

申请日：2004-11-05

Applicant: Wei-Lin Chen ,  Hung-Sheng Hu

Inventor： Wei-Lin Chen ,  Hung-Sheng Hu

IPC: B41J2/14 ,  B41J2/16 ,  B41J2/05

CPC classification number: B41J2/14137 ,  B41J2/1601 ,  B41J2/1631 ,  B41J2/1642 ,  B41J2/1643

Abstract: A fluid injector and method of manufacturing the same. The fluid injector comprises a base, a first through hole, a fluid actuator, a passivation layer, and a thick hydrophobic film. The base includes a chamber and a surface. The first through hole communicates with the chamber, and is disposed in the base. The fluid actuator is disposed on the surface near the first through hole, and is located outside the chamber. The passivation layer is disposed on the surface. The thick hydrophobic film defines a second through hole, and is disposed on the passivation layer outside the chamber. The second through hole communicates with the first through hole.

Abstract translation: 一种流体注射器及其制造方法。 流体注射器包括底座，第一通孔，流体致动器，钝化层和厚疏水膜。 底座包括一个腔室和一个表面。 第一通孔与腔室连通，并设置在基座中。 流体致动器设置在靠近第一通孔的表面上，并且位于室外。 钝化层设置在表面上。 厚疏水膜限定第二通孔，并且设置在室外的钝化层上。 第二通孔与第一通孔连通。

公开(公告)号：US20050093106A1

公开(公告)日：2005-05-05

申请号：US10980958

申请日：2004-11-04

Applicant: Hung-Sheng Hu ,  Wei-Lin Chen

Inventor： Hung-Sheng Hu ,  Wei-Lin Chen

IPC: B41J2/14 ,  B41J2/16 ,  H01L21/02 ,  H01L29/04

CPC classification number: B41J2/14137 ,  B41J2/1603 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1642 ,  Y10T29/49401

Abstract: A fluid ejection device includes a first substrate having a first crystal orientation, a second substrate having a second crystal orientation, bound to the first substrate, a manifold through the first and second substrates, a chamber formed in the second substrate, connected with the manifold, and a plurality of nozzles connecting to the chamber, wherein the first crystal orientation is different from the second crystal orientation. A method of fabricating the same is also disclosed.

Abstract translation: 流体喷射装置包括具有第一晶体取向的第一基板，具有第二晶体取向的第二基板，与第一基板结合的歧管，通过第一和第二基板的歧管，形成在第二基板中的与歧管连接的腔室 以及连接到所述室的多个喷嘴，其中所述第一晶体取向不同于所述第二晶体取向。 还公开了一种制造该方法的方法。

公开(公告)号：US20050001884A1

公开(公告)日：2005-01-06

申请号：US10877459

申请日：2004-06-25

Applicant: Hung-Sheng Hu ,  Wei-Lin Chen ,  Tsung-Ping Hsu

Inventor： Hung-Sheng Hu ,  Wei-Lin Chen ,  Tsung-Ping Hsu

IPC: B41J2/14 ,  B41J2/16 ,  H01L21/00

CPC classification number: B41J2/1639 ,  B41J2/14137 ,  B41J2/1601 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1632 ,  B41J2/1642 ,  B41J2/1643 ,  B41J2/1646 ,  B41J2002/1437

Abstract: A method for fabricating a fluid injection micro device. The method includes the steps of providing a substrate with an insulating layer thereon. A heater is formed on the insulating layer. A patterned conductive layer is formed on the heater and the insulating layer. A protective layer is formed on the conductive layer to insulate the conductive layer. An opening is formed by sequentially etching the protective layer, the insulating layer and the substrate. A patterned thick film, having a defined chamber, is formed on the protective layer. The back of the substrate is removed and thinned until the opening forms a through hole.

Abstract translation: 一种制造流体注射微型装置的方法。 该方法包括以下步骤：在基底上提供绝缘层。 在绝缘层上形成加热器。 图案化导电层形成在加热器和绝缘层上。 在导电层上形成保护层以使导电层绝缘。 通过依次蚀刻保护层，绝缘层和基板来形成开口。 在保护层上形成具有限定腔室的图案化的厚膜。 去除基板的背面并变薄，直到开口形成通孔。

公开(公告)号：US06693045B2

公开(公告)日：2004-02-17

申请号：US09683692

申请日：2002-02-04

Applicant: Tsung-Ping Hsu ,  In-Yao Lee ,  Hung-Sheng Hu ,  Chung-Cheng Chou ,  Wei-Lin Chen

Inventor： Tsung-Ping Hsu ,  In-Yao Lee ,  Hung-Sheng Hu ,  Chung-Cheng Chou ,  Wei-Lin Chen

IPC: H01L2100

CPC classification number: B81C1/00626 ,  B81C2201/0133 ,  B81C2201/016

Abstract: A gradational etching method for high density wafer production. The gradational etching method acts on a substrate having a first passivation layer and a second passivation layer on a top surface and a bottom surface, respectively, of the substrate. A first etching process is performed to simultaneously etch the substrate and the first passivation layer to remove the first passivation layer. Finally, a second etching process is performed to etch the substrate to a designated depth that is used to control the thickness of the wafer after the second etching process.

Abstract translation: 用于高密度晶片生产的渐变蚀刻方法。 分级蚀刻方法分别作用于具有基板的顶表面和底表面上的第一钝化层和第二钝化层的基板上。 执行第一蚀刻工艺以同时蚀刻衬底和第一钝化层以去除第一钝化层。 最后，执行第二蚀刻工艺以将衬底蚀刻到用于在第二蚀刻工艺之后控制晶片的厚度的指定深度。

公开(公告)号：US06530648B2

公开(公告)日：2003-03-11

申请号：US10138291

申请日：2002-05-06

Applicant: Yi-Jing Leu ,  Hung-Sheng Hu ,  Tsung-Ping Hsu ,  Wei-Lin Chen ,  In-Yao Lee ,  Chung-Cheng Chou

Inventor： Yi-Jing Leu ,  Hung-Sheng Hu ,  Tsung-Ping Hsu ,  Wei-Lin Chen ,  In-Yao Lee ,  Chung-Cheng Chou

IPC: B41J214

CPC classification number: B41J2/14129 ,  B41J2002/14177

Abstract: An apparatus for using the bubble as a virtual valve to eject ink comprises a chamber, orifice, and heaters. The chamber, having a top surface and a bottom surface, is connected to the ink reservoir by a manifold. Two heaters, connected in series to a common electrode, are located on the bottom surface of the chamber. One heater having higher resistance is positioned adjacent to the manifold, and the other heater having lower resistance is positioned away from the manifold. When an electrical pulse is applied to activate the heaters, the heater close to the manifold heats up first, and generates a first bubble to isolate the ink flow between the chamber and manifold, thereby reducing the effects of cross talk. Subsequently, the heater away from the manifold generates the second bubble to pressurize the ink in the chamber with the first bubble, and the ink is ejected through the orifice. Then, the first bubble collapses, and breaks the isolation between the manifold and the chamber. The ink in the manifold immediately refills to the chamber.