Invention Grant
US09127984B2 SERS-active structure, fabrication method thereof, and SERS system comprising the same
有权
SERS活性结构体及其制造方法以及包含该SERS活性结构体的SERS系统
- Patent Title: SERS-active structure, fabrication method thereof, and SERS system comprising the same
- Patent Title (中): SERS活性结构体及其制造方法以及包含该SERS活性结构体的SERS系统
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Application No.: US13749699Application Date: 2013-01-25
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Publication No.: US09127984B2Publication Date: 2015-09-08
- Inventor: Fan-Gang Tseng , Teng-Feng Kuo , Tsung-Yen Lee
- Applicant: NATIONAL TSING HUA UNIVERSITY
- Applicant Address: TW Hsinchu
- Assignee: NATIONAL TSING HUA UNIVERSITY
- Current Assignee: NATIONAL TSING HUA UNIVERSITY
- Current Assignee Address: TW Hsinchu
- Agency: CKC & Partners Co., Ltd.
- Priority: TW101128798A 20120809
- Main IPC: G01J3/44
- IPC: G01J3/44 ; G01J1/58 ; H03F17/00 ; B05D7/22 ; B32B3/10 ; G01N21/65

Abstract:
A SERS-active structure includes a substrate, at least one metal nanoparticle, a dielectric layer and a metal nanolayer. The metal nanoparticles are disposed on the substrate. The substrate and the metal nanoparticles are covered by the dielectric layer, so that the dielectric layer forms a recessed portion with a dihedral angle formed by a surface of the dielectric layer at which the at least one metal nanoparticle contacts the substrate. The dielectric layer is covered by the metal nanolayer and the metal nanolayer has a gap located at and exposing the recessed portion.
Public/Granted literature
- US20140043605A1 SERS-ACTIVE STRUCTURE, FABRICATION METHOD THEREOF, AND SERS SYSTEM COMPRISING THE SAME Public/Granted day:2014-02-13
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