Invention Grant
- Patent Title: Optoelectronic element and manufacturing method thereof
- Patent Title (中): 光电元件及其制造方法
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Application No.: US13886083Application Date: 2013-05-02
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Publication No.: US09142740B2Publication Date: 2015-09-22
- Inventor: Cheng-Nan Han , Tsung-Xian Lee , Min-Hsun Hsieh , Hung-Hsuan Chen , Hsin-Mao Liu , Hsing-Chao Chen , Ching-San Tao , Chih-Peng Ni , Tzer-Perng Chen , Jen-Chau Wu , Masafumi Sano , Chih-Ming Wang
- Applicant: EPISTAR CORPORATION
- Applicant Address: TW Hsinchu
- Assignee: EPISTAR CORPORATION
- Current Assignee: EPISTAR CORPORATION
- Current Assignee Address: TW Hsinchu
- Agency: Ditthavong & Steiner, P.C.
- Priority: TW098124681A 20090721; TW098146171A 20091230; TW101115716A 20120502; TW101128707A 20120808
- Main IPC: H01L33/58
- IPC: H01L33/58 ; H01L33/62 ; H01L33/50 ; H01L33/54 ; H01L33/64
Abstract:
An optoelectronic element includes an optoelectronic unit having a first top surface; a first metal layer on the first top surface; a first transparent structure surrounding the optoelectronic unit and exposing the first top surface; and a first contact layer on the first transparent structure, including a connective part electrically connected with the first metal layer.
Public/Granted literature
- US20130313594A1 OPTOELECTRONIC ELEMENT AND MANUFACTURING METHOD THEREOF Public/Granted day:2013-11-28
Information query
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