Invention Grant
- Patent Title: Resistive random access memory and method of fabricating the same
- Patent Title (中): 电阻随机存取存储器及其制造方法
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Application No.: US14481925Application Date: 2014-09-10
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Publication No.: US09166160B1Publication Date: 2015-10-20
- Inventor: Chia-Hua Ho , Shuo-Che Chang , Hsiu-Han Liao , Po-Yen Hsu , Meng-Hung Lin , Bo-Lun Wu , Ting-Ying Shen
- Applicant: Winbond Electronics Corp.
- Applicant Address: TW Taichung
- Assignee: Winbond Electronics Corp.
- Current Assignee: Winbond Electronics Corp.
- Current Assignee Address: TW Taichung
- Agency: Jianq Chyun IP Office
- Priority: TW103112331A 20140402
- Main IPC: H01L47/00
- IPC: H01L47/00 ; H01L21/20 ; H01L45/00
Abstract:
Provided is a resistive random access memory including a first electrode layer, a second electrode layer, and a variable resistance layer disposed between the first electrode layer and the second electrode layer, wherein the second electrode layer includes a first sublayer, a second sublayer, and a conductive metal oxynitride layer disposed between the first sublayer and the second sublayer.
Public/Granted literature
- US20150287914A1 RESISTIVE RANDOM ACCESS MEMORY AND METHOD OF FABRICATING THE SAME Public/Granted day:2015-10-08
Information query
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