Invention Grant
US09177656B2 Data writing method, memory storage device and memory controlling circuit unit
有权
数据写入方法,存储器存储装置和存储器控制电路单元
- Patent Title: Data writing method, memory storage device and memory controlling circuit unit
- Patent Title (中): 数据写入方法,存储器存储装置和存储器控制电路单元
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Application No.: US14162783Application Date: 2014-01-24
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Publication No.: US09177656B2Publication Date: 2015-11-03
- Inventor: Chih-Kang Yeh
- Applicant: PHISON ELECTRONICS CORP.
- Applicant Address: TW Miaoli
- Assignee: PHISON ELECTRONICS CORP.
- Current Assignee: PHISON ELECTRONICS CORP.
- Current Assignee Address: TW Miaoli
- Agency: Jianq Chyun IP Office
- Priority: TW102141080U 20131112
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/04 ; G11C16/14 ; G11C16/10

Abstract:
The writing method includes: grouping logical erasing units into a first region and an second region; determining if a first logical erasing unit which a host system intends to write belongs to the first region or the second region; if the first logical erasing unit belongs to the first region, writing data to a spare physical programming unit, wherein the physical erasing unit to which the spare physical programming belongs further stores data belonging to another logical erasing unit; if the first logical erasing unit belongs to the second region, writing data to a physical erasing unit in which all the valid data belong to the first logical erasing unit. Accordingly, a speed of sequential writing is guaranteed to be greater than a target value.
Public/Granted literature
- US20150131386A1 DATA WRITING METHOD, MEMORY STORAGE DEVICE AND MEMORY CONTROLLING CIRCUIT UNIT Public/Granted day:2015-05-14
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