A semiconductor device capable of reducing influences of adjacent word lines is provided in the present invention. The semiconductor device includes: a substrate, and a word line disposed in the substrate. The word line includes: a gate electrode, a gate dielectric layer disposed between the gate electrode and the substrate and at least one first charge trapping dielectric layer disposed adjacent to the gate electrode, wherein the first charge trapping dielectric layer comprises HfO2, TiO2, ZrO2, a germanium nanocrystal layer, an organic charge trapping material, HfSiOxNy, or MoSiOqNz.