Invention Grant
US09218992B2 Hybrid laser and plasma etch wafer dicing using substrate carrier
有权
使用衬底载体的混合激光和等离子体蚀刻晶片切割
- Patent Title: Hybrid laser and plasma etch wafer dicing using substrate carrier
- Patent Title (中): 使用衬底载体的混合激光和等离子体蚀刻晶片切割
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Application No.: US14166715Application Date: 2014-01-28
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Publication No.: US09218992B2Publication Date: 2015-12-22
- Inventor: Saravjeet Singh , Brad Eaton , Ajay Kumar , Wei-Sheng Lei , James M. Holden , Madhava Rao Yalamanchili , Todd J. Egan
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely Sokoloff Taylor & Zafman LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/67 ; H01L21/78 ; H01L21/3065 ; H01L21/308 ; H01L21/683 ; H01L21/687 ; B23K26/06 ; B23K26/36 ; B23K26/40

Abstract:
Methods of and apparatuses for dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The semiconductor wafer is supported by a substrate carrier. The mask is then patterned with a laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the integrated circuits while supported by the substrate carrier.
Public/Granted literature
- US20140144585A1 HYBRID LASER AND PLASMA ETCH WAFER DICING USING SUBSTRATE CARRIER Public/Granted day:2014-05-29
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