Invention Grant
- Patent Title: Focused ion beam system
- Patent Title (中): 聚焦离子束系统
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Application No.: US14221514Application Date: 2014-03-21
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Publication No.: US09245712B2Publication Date: 2016-01-26
- Inventor: Yasuhiko Sugiyama , Tomokazu Kozakai , Osamu Matsuda
- Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION
- Applicant Address: JP
- Assignee: HITACHI HIGH-TECH SCIENCE CORPORATION
- Current Assignee: HITACHI HIGH-TECH SCIENCE CORPORATION
- Current Assignee Address: JP
- Agency: Adams & Wilks
- Priority: JP2013-061637 20130325
- Main IPC: H01J37/28
- IPC: H01J37/28 ; H01J37/22 ; H01J37/08

Abstract:
A focused ion beam system includes a gas field ion source which generates gas ions, an ion gun unit which accelerates the gas ions and radiates the gas ions as an ion beam, a beam optical system which includes at least a focusing lens electrode and radiates the ion beam onto a sample, and an image acquiring mechanism which acquires an FIM image of a tip of an emitter based on the ion beam. The image acquiring mechanism includes an alignment electrode which is disposed between the ion gun unit and the focusing lens electrode and adjusts a radiation direction of the ion beam, an alignment control unit which applies an alignment voltage to the alignment electrode, and an image processing unit which combines a plurality of FIM images acquired when applying different alignment voltages to generate one composite FIM image.
Public/Granted literature
- US20140284474A1 FOCUSED ION BEAM SYSTEM Public/Granted day:2014-09-25
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