Invention Grant
- Patent Title: Film deposition apparatus and film deposition method
- Patent Title (中): 薄膜沉积装置和薄膜沉积方法
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Application No.: US14306321Application Date: 2014-06-17
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Publication No.: US09310524B2Publication Date: 2016-04-12
- Inventor: Haruhiko Yamamoto , Kenjiro Kokubu
- Applicant: ULVAC, INC.
- Applicant Address: JP
- Assignee: Ulvac, Inc.
- Current Assignee: Ulvac, Inc.
- Current Assignee Address: JP
- Agency: Sheridan Ross P.C.
- Priority: JP2008-101606 20080409
- Main IPC: H05H1/00
- IPC: H05H1/00 ; G02B1/10 ; B05D3/10 ; C23C8/36 ; C23C14/00 ; C23C14/56 ; C23C14/58 ; C23C28/00 ; C23C28/04 ; B05D1/00 ; B05D5/08

Abstract:
A film formation device (10) that increases the mechanical resistance of the liquid repellent film formed on the oxide film. The film formation device (10) includes an oxide film formation unit (14, 15, 16), which forms an oxidized film on a substrate by releasing grains towards the substrate that is rotated in a vacuum chamber (11), and forms an oxide film on the substrate by emitting oxygen plasma towards the oxidized film. A vapor deposition unit (17) vapor-deposits a silane coupling agent, which contains a hydrolytic polycondensation group and a liquid repellent group, on the oxide film. A polycondensation unit (20) polycondenses the silane coupling agent by supplying water towards the oxide film on the rotated substrate. The polycondensation unit supplies water to the oxide film before the vapor deposition unit vapor deposits the silane coupling agent on the oxide film.
Public/Granted literature
- US20140295104A1 Film Deposition Apparatus and Film Deposition Method Public/Granted day:2014-10-02
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