Invention Grant
US09323870B2 Method and apparatus for improved integrated circuit temperature evaluation and IC design
有权
用于改进集成电路温度评估和IC设计的方法和装置
- Patent Title: Method and apparatus for improved integrated circuit temperature evaluation and IC design
- Patent Title (中): 用于改进集成电路温度评估和IC设计的方法和装置
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Application No.: US13874925Application Date: 2013-05-01
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Publication No.: US09323870B2Publication Date: 2016-04-26
- Inventor: Rajit C. Chandra
- Applicant: Advanced Micro Devices, Inc.
- Applicant Address: US CA Sunnyvale
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: Faegre Baker Daniels LLP
- Main IPC: G06F17/50
- IPC: G06F17/50
Abstract:
A method and apparatus generates thermal partitions for metal interconnects of an integrated circuit, based on interconnect self heat data and mutual heat data. Each of the thermal partitions includes data identifying thermally related interconnects and respective temperature values associated with each of the thermally related interconnects. Thermally related partitions that can be computed efficiently and simultaneously and the results then integrated using superposition for the full chips.
Public/Granted literature
- US20130298101A1 METHOD AND APPARATUS FOR IMPROVED INTEGRATED CIRCUIT TEMPERATURE EVALUATION AND IC DESIGN Public/Granted day:2013-11-07
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