Invention Grant
- Patent Title: Structure and formation method of memory device
- Patent Title (中): 存储器件的结构和形成方法
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Application No.: US14474931Application Date: 2014-09-02
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Publication No.: US09356235B2Publication Date: 2016-05-31
- Inventor: Po-Yen Hsu , Hsiu-Han Liao , Shuo-Che Chang , Chia Hua Ho
- Applicant: Winbond Electronics Corp.
- Applicant Address: TW Taichung
- Assignee: Winbond Electronics Corp.
- Current Assignee: Winbond Electronics Corp.
- Current Assignee Address: TW Taichung
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: TW103110984A 20140325
- Main IPC: H01L45/00
- IPC: H01L45/00
Abstract:
Structures and formation methods of memory devices are provided. The memory device includes a first electrode, a second electrode, and a resistive layer positioned between the first electrode and the second electrode. The resistive layer has a crystalline portion. A volume ratio of the crystalline portion to the resistive layer is in a range from about 0.2 to about 1.
Public/Granted literature
- US20150280119A1 STRUCTURE AND FORMATION METHOD OF MEMORY DEVICE Public/Granted day:2015-10-01
Information query
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