Invention Grant
- Patent Title: Apparatus for charged particle lithography system
- Patent Title (中): 带电粒子光刻系统的装置
-
Application No.: US14483740Application Date: 2014-09-11
-
Publication No.: US09390891B2Publication Date: 2016-07-12
- Inventor: Shih-Chi Wang , Tsung-Chih Chien , Hui-Min Huang , Jaw-Jung Shin , Shy-Jay Lin , Burn Jeng Lin
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01J37/00
- IPC: H01J37/00 ; H01J37/10 ; H01J37/317 ; H01J37/04

Abstract:
An apparatus for use in a charged particle multi-beam lithography system is disclosed. The apparatus includes a plurality of charged particle doublets each having a first aperture and each configured to demagnify a beamlet incident upon the first aperture thereby producing a demagnified beamlet. The apparatus further includes a plurality of charged particle lenses each associated with one of the charged particle doublets, each having a second aperture, and each configured to receive the demagnified beamlet from the associated charged particle doublet and to realize one of two states: a switched-on state, wherein the demagnified beamlet is allowed to travel along a desired path, and a switched-off state, wherein the demagnified beamlet is prevented from traveling along the desired path. In embodiments, the first aperture is greater than the second aperture, thereby improving particle beam efficiency in the charged particle multi-beam lithography system.
Public/Granted literature
- US20160049278A1 Apparatus for Charged Particle Lithography System Public/Granted day:2016-02-18
Information query