Invention Grant
US09436547B2 Data storing method, memory control circuit unit and memory storage device
有权
数据存储方法,存储器控制电路单元和存储器存储装置
- Patent Title: Data storing method, memory control circuit unit and memory storage device
- Patent Title (中): 数据存储方法,存储器控制电路单元和存储器存储装置
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Application No.: US14492081Application Date: 2014-09-22
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Publication No.: US09436547B2Publication Date: 2016-09-06
- Inventor: Chih-Kang Yeh
- Applicant: PHISON ELECTRONICS CORP.
- Applicant Address: TW Miaoli
- Assignee: PHISON ELECTRONICS CORP.
- Current Assignee: PHISON ELECTRONICS CORP.
- Current Assignee Address: TW Miaoli
- Agency: Jianq Chyun IP Office
- Priority: TW103125990A 20140730
- Main IPC: G06F11/10
- IPC: G06F11/10 ; G06F12/02

Abstract:
A data storing method, a memory control circuit unit and a memory storage device are provided. The method includes: generating a parity according to first data. The method also includes: when programming the first data into first physical programming unit, programming at least one mark into redundancy bit area of the first physical programming unit. The method further includes: programming the parity into at least one second physical programming unit arranged after the first physical programming unit, and the at least one mark indicates that the parity is programmed into the at least one second physical programming unit.
Public/Granted literature
- US20160034343A1 DATA STORING METHOD, MEMORY CONTROL CIRCUIT UNIT AND MEMORY STORAGE DEVICE Public/Granted day:2016-02-04
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